CYSTEKEC BTC1510I3

CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BVCEO
IC
RCESAT
BTC1510I3
Spec. No. : C652I3
Issued Date : 2005.06.23
Revised Date :2009.02.04
Page No. : 1/6
150V
10A
220mΩ
Description
The BTC1510I3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed
switching application.
Features:
• High BVCEO
• Low VCE(SAT)
• High current gain
• Monolithic construction with built-in base-emitter shunt resistors
• RoHS compliant package
Equivalent Circuit
Outline
BTC1510I3
TO-251
C
B
R1≈8k
R2≈120
B:Base
C:Collector
E:Emitter
BTC1510I3
E
B CC E
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C652I3
Issued Date : 2005.06.23
Revised Date :2009.02.04
Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd(TA=25℃)
Pd(TC=25℃)
Tj
Tstg
150
150
5
10
15
1.75
20
150
-55~+150
V
V
V
*1
A
W
°C
°C
Note : *1. Single Pulse Pw=100ms
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
ICEO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VBE(sat)
*VBE(on) 1
*VBE(on) 2
*VFEC
*hFE1
*hFE2
Min.
150
150
2
100
Typ.
-
Max.
200
200
2
1.5
3
2
2
2.8
4.5
3
20
-
Unit
V
V
μA
μA
mA
V
V
V
V
V
V
V
K
-
Test Conditions
IC=100μA, IE=0
IC=1mA, IB=0
VCE=150V, IE=0
VCB=150V, IE=0
VEB=5V, IC=0
IC=5A, IB=10mA
IC=10A, IB=100mA
IC=5A, IB=2.5mA
IC=5A, IB=5mA
VCE=3V, IC=5A
VCE=3V, IC=10A
IC=5A
VCE=3V, IC=5A
VCE=3V, IC=10A
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
BTC1510I3
BTC1510I3
Package
TO-251
(RoHS compliant)
Shipping
Marking
80 pcs / tube, 50 tubes / box
C1510
CYStek Product Specification
Spec. No. : C652I3
Issued Date : 2005.06.23
Revised Date :2009.02.04
Page No. : 3/6
CYStech Electronics Corp.
Characteristic Curves
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
10000
100000
Saturation Voltage---(mV)
Current Gain--- HFE
[email protected]=3V
10000
125℃
1000
75℃
100
25℃
10
VCE(SAT)@IC=250IB
25℃
1000
100
1
10
100
1000
100
10000
10000
Collector Current---IC(mA)
Saturation Voltage vs Collcetor Current
Saturation Voltage vs Colltctor Current
10000
VCE(SAT)@IC=2000IB
VCE(SAT)@IC=500IB
Saturation Voltage---(mV)
Saturation Voltage---(mV)
1000
Collector Current---IC(mA)
10000
75℃
25℃
1000
125℃
100
1000
25℃
75℃
1000
125℃
100
10000
100
Collector Current---IC(mA)
1000
10000
Collector Current---IC(mA)
Saturation Voltage vs Collcetor Current
Power Derating Curve
10000
2
1.75
25℃
Power Dissipation---PD(W)
VBE(ON)@VCE=3V
On Voltage---(mV)
125℃
75℃
75℃
1000
125℃
1.5
1.25
1
0.75
0.5
0.25
0
100
100
1000
Collector Current---IC(mA)
BTC1510I3
10000
0
50
100
150
200
Ambient Temperature---TA(℃)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C652I3
Issued Date : 2005.06.23
Revised Date :2009.02.04
Page No. : 4/6
Characteristic Curves(Cont.)
Power Derating Curve
Power Dissipation---PD(W)
25
20
15
10
5
0
0
50
100
150
200
Case Temperature---TC(℃)
BTC1510I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C652I3
Issued Date : 2005.06.23
Revised Date :2009.02.04
Page No. : 5/6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
BTC1510I3
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
CYStek Product Specification
Spec. No. : C652I3
Issued Date : 2005.06.23
Revised Date :2009.02.04
Page No. : 6/6
CYStech Electronics Corp.
TO-251 Dimension
A
B
C
Marking:
D
C1510
F
G
3
K
E
I
H
2
1
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-251 Plastic Package
CYStek Package Code: I3
J
*: Typical
Inches
Min.
Max.
0.0177
0.0217
0.0354
0.0591
0.0177
0.0236
0.0866
0.0945
0.2441
0.2677
0.2677
0.2835
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
0.45
0.55
0.90
1.50
0.45
0.60
2.20
2.40
6.20
6.80
6.80
7.20
DIM
G
H
I
J
K
Inches
Min.
Max.
0.2559
*0.1811
0.0449
0.0346
0.2047
0.2165
Millimeters
Min.
Max.
6.50
*4.60
1.14
0.88
5.20
5.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: KFC; pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC1510I3
CYStek Product Specification