2SB082020MAJL 2SB082020MAJL SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB082020MAJL is a schottky barrier diode chips Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching fabricated in silicon epitaxial planar technology; power suppliers, polarity protection circuits and Chip Topography and Dimensions other electronic circuits.; Ø Chip Size:830µm X 830µm; Ø Chip Thickness: 210±20µm; La: Chip Size: 830µm; Lb: Pad Size: 750µm; ORDERING SPECIFICATIONS Product Name Specification 2SB082020MAJL For Au and AlSi wire bonding package ABSOLUTE MAXIMUM RATINGS Parameters Symbol Ratings Unit Maximum Repetitive Peak Reverse Voltage VRRM 20 V Average Forward Rectified Current IFAV 1 A Peak Forward Surge [email protected] IFSM 40 A TJ 150 °C TSTG -40~150 °C Maximum Operation Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameters Reverse Voltage Forward Voltage Reverse Current Symbol Test Conditions Min. Max. Unit VBR IR=50 A 20 -- V VF1 IF=1A -- 0.530 V VF2 IF=2A -- 0.595 V IR1 VR=20V -- 10 A IR2 VR=10V -- 1 A HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2008.05.19 Page 1 of 1