SSC RB520S-30

RB520S-30
SCHOTTKY BARRIER DIODES
PRODUCT SUMMARY
SOD-523 Plastic-Encapsulate Diodes
SOD-523
+
FEATURES
Small surface mounting type
Low IR. (IR = 0.1 uA)
High reliability
-
Pb-free; RoHS-compliant
MARKING: B
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Single Diode @TA=25 C
Parameter
Symbol
Limits
Unit
DC reverse voltage
VR
30
V
Mean rectifying current
IO
200
mA
IFSM
1
A
Junction temperature
Tj
125
℃
Storage temperature
Tstg
-40-125
℃
Peak forward surge current
ELECTRICAL RATINGS @TA=25 oC
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
VF
0.6
V
IF=200mA
Reverse current
IR
1
μA
VR=10V
08/03/2007 Rev.1.00
www.SiliconStandard.com
1
RB520S-30
TYPICAL CHARACTERISTICS
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
08/03/2007 Rev.1.00
www.SiliconStandard.com
2