SSM60T03GP,S
N-channel Enhancement-mode Power MOSFET
Low gate-charge
D
Simple drive requirement
Fast switching
G
Pb-free, RoHS compliant.
BV DSS
30V
R DS(ON)
12mΩ
ID
45A
S
DESCRIPTION
The SSM60T03GS is in a TO-263 package, which is widely used for
commercial and industrial surface-mount applications. This device is
suitable for low-voltage applications such as DC/DC converters.
The through-hole version, the SSM60T03GP in TO-220, is available for
vertical-mounting, where a small footprint is required on the board, and/or
an external heatsink is to be attached.
These devices are manufactured with an advanced process, permitting
operation up to a maximum junction temperature of 175°C.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
G
G
D
D S
TO-263 (S)
TO-220(P)
S
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID @ TC=25°C
Continuous Drain Current
45
A
ID @ TC=100°C
Continuous Drain Current
32
A
120
A
44
W
1
IDM
Pulsed Drain Current
PD @ TC=25°C
Total Power Dissipation
Linear Derating Factor
0.352
W/°C
TSTG
Storage Temperature Range
-55 to 175
°C
TJ
Operating Junction Temperature Range
-55 to 175
°C
THERMAL DATA
Symbol
RΘJC
RΘJA
9/16/2005 Rev.3.1
Parameter
Maximum Thermal Resistance Junction-case
Maximum Thermal Resistance Junction-ambient
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Value
Units
3.4
°C/W
62
°C/W
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SSM60T03GP,S
ELECTRICAL CHARACTERISTICS (at Tj=25°C, unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
∆ BV DSS/∆ Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
-
0.03
-
V/°C
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=20A
-
-
12
mΩ
VGS=4.5V, ID=15A
-
-
25
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=10A
-
25
-
S
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=175 C)
VDS=24V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=20A
-
11.6
19
nC
VGS(th)
Gate Threshold Voltage
Forward Transconductance
gfs
2
o
IDSS
Drain-Source Leakage Current (T j=25 C)
o
IGSS
2
VGS=0V, ID=250uA
Min.
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
3.9
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7
-
nC
VDS=15V
-
8.8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=20A
-
57.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω , VGS=10V
-
18.5
-
ns
tf
Fall Time
RD=0.75Ω
-
6.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
1135 1816
pF
Coss
Output Capacitance
VDS=25V
-
200
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
135
-
pF
Min.
Typ.
IS=45A, VGS=0V
-
-
1.3
V
IS=20A, VGS=0V,
-
23.3
-
ns
dI/dt=100A/µs
-
16
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us, duty cycle <2%.
9/16/2005 Rev.3.1
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SSM60T03GP,S
90
125
6.0V
75
5.0V
50
25
6.0V
60
5.0V
30
V G =4.0V
V G =4.0V
0
0
0
1
2
3
0
4
V DS , Drain-to-Source Voltage (V)
2
3
4
5
Fig 2. Typical Output Characteristics
2
80
I D =20A
V G =10V
I D =15A
T C =25 ° C
1.6
Normalized R DS(ON)
60
RDS(ON) (m Ω )
1
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
40
1.2
0.8
20
0.4
0
2
4
6
8
-50
10
25
V GS , Gate-to-Source Voltage (V)
100
175
T j , Junction Temperature ( o C)
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
3
100
10
2
o
o
VGS(th) (V)
T j =25 C
IS(A)
T j =175 C
1
1
0.1
0
0
0.5
1
1.5
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
9/16/2005 Rev.3.1
10V
8.0V
o
T C =175 C
ID , Drain Current (A)
T C =25 o C
100
ID , Drain Current (A)
10V
8.0V
-50
25
100
175
o
T j , Junction Temperature ( C )
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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SSM60T03GP,S
f=1.0MHz
10000
12
V DS =16V
V DS =20V
V DS =24V
9
C (pF)
VGS , Gate to Source Voltage (V)
I D =20A
C iss
1000
6
3
C oss
C rss
0
100
0
6
12
18
24
1
8
Q G , Total Gate Charge (nC)
15
22
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
ID (A)
100
100us
10
1ms
10ms
100ms
Normalized Thermal Response (Rthjc)
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
DC
1
0.01
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
9/16/2005 Rev.3.1
Charge
Q
Fig 12. Gate Charge Waveform
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SSM60T03GP,S
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responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
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without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
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