SY 1N4448W

1N4448W
FAST SWITCHING DIODE
SOD-123
1.80(.071)
1.65(.065)
1.40(.055)
1.55(.061)
3.86(0.152)
3.9(0.154)
2.84(0.112)
3.56(0.145)
3.7(0.146)
2.54(0.100)
FEATURES
2.7(0.106)
2.6(0.102)
.71(0.028)
0.6(.023)
.50(0.020)
0.5(.020)
.15(.006)
MAX
Fast switching speed
Surface mount package ideally suited
for automatic insertion
For general purpose switching applications
High conductance
MECHANICAL DATA
1.35(.053)
.135(.005)
1.15(.045)
.94(.037)
.127(.004)
1.05(.041)
.25(.010)
MIN
Case: Molded plastic body
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: Polarity symbols marked on case
Marking:T5
Dimensions in millimeters and (inches)
Maximum ratings and electrical characteristics, Single diode @TA=25C
PARAMETER
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC Blocking voltage
RMS Reverse voltage
Forward continuous current
Average rectified output current
Peak forward surge current @=1.0us
@=1.0s
Power dissipation
Thermal resistance junction to ambient
Storage temperature
Non-Repetitive peak reverse voltage
UNITS
SYMBOLS
Limits
VRRM
VRWM
VR
75
V
53
500
250
4.0
2.0
400
315
-65 to +150
100
V
mA
mA
A
VR(RMS)
IFM
IO
IFSM
Pd
RΘJA
TSTG
VRM
mW
K/W
C
V
Electrical ratings @TA=25C
PARAMETER
Reverse brdakdown voltage
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
SYMBOLS
V(BR)R
VF1
VF2
VF3
VF4
IR1
IR2
Min.
Typ.
75
0.62
Max.
Unit
V
V
V
V
V
CT
0.72
0.855
1.0
1.25
2.5
25
4
uA
nA
pF
trr
4
ns
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Conditions
IR=10uA
IF=5mA
IF=10mA
IF=100mA
IF=150mA
VR=75V
VR=20V
VR=0V,f=1.0MHz
IF=IR=10mA
Irr=0.1XIR,RL=100
RATINGS AND CHARACTERISTIC CURVES 1N4448W
FIG. 1- POWER DERATING CURVE
FIG. 2-TYPICAL FORWARD CHARACTERISTICS
100
IF, FORWARD CURRENT(A)
P d.POWER DISSIPATION(mW)
600
500
400
300
200
TA=25 C
TA=50 C
10
TA=0 C
T A=85 C
1.0
TA =-30 C
100
0
0
0.1
25
50
75
100
125
150
0
200
TA,AMBIENT TEMPERATURE( C)
Trr, REVEERSE RECOVERY TIME (nS)
FIG. 3- TYPICAL REVERSE CHARACTERISTICS
IR,REVERSE CURRENT(uA)
10
TA=100 C
1.0
TA=75 C
0.1
TA=50 C
TA=25 C
TA=0 C
0.01
TA=-30 C
1000
2.0
1.5
1.0
0.5
20
40
60
80
0
20
FIG. 5- TOTAL CAPACITANCE
VS REVERSE VOLTAGE
f=1MHz
3
2
1
1
2
3
4
40
60
80
VR, FORWARD CURRENT (mA)
4
CT.TOTAL CAPACITANCE (pF)
800
FIG. 4- REVERSE RECOVERY TIME
VS FORWARD CURRENT
2.5
VR, REVERSE VOLTAGE (V)
0
600
0
0.001
0
0
400
VF FORWARD VOLTAGE (mV)
5
6
VR,REVERSE VOLTAGE (V)
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100