1N5400 - 1N5408 SILICON RECTIFIER DIODES DO - 201AD PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free 1.00 (25.4) MIN. 0.21 (5.33) 0.19 (4.83) 0.375 (9.53) 0.285 (7.24) MECHANICAL DATA : 1.00 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.929 grams Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specifie. Single phase, half wave, 60 Hz, resistive or inductive load For capacitive load, derate current by 20% RATING SYMBOL 1N 1N 1N 1N 1N 1N 1N 1N 1N 5400 5401 5402 5403 5404 5405 5406 5407 5408 Maximum Repetitive Peak Reverse Voltage VRRM 50 Maximum RMS Voltage VRMS Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 75 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at I F = 3.0 Amps. VDC Maximum DC Reverse Current Ta = 25 °C at rated DC Blocking Voltage Ta = 100 °C 100 200 300 400 500 600 800 35 70 140 210 280 350 420 50 100 200 300 400 500 600 UNIT 1000 V 560 700 V 800 1000 V IF 3.0 A IFSM 200 A VF 1.0 V IR 5.0 μA IR(H) 50 μA Typical Junction Capacitance (Note1) CJ 28 pF Typical Thermal Resistance (Note2) °C/W RθJA 15 Junction Temperature Range TJ - 65 to + 175 °C Storage Temperature Range TSTG - 65 to + 175 °C Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. Page 1 of 2 Rev. 03 : March 31, 2005 RATING AND CHARACTERISTIC CURVES ( 1N5400 - 1N5408 ) FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 3.0 250 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 2.4 1.8 1.2 0.6 200 150 100 50 0 0 25 50 75 100 125 150 8.3ms SINGLE HALF SINE-WAVE (JEDEC) Method 0 175 1 2 AMBIENT TEMPERATURE, ( °C) 100 FORWARD CURRENT, AMPERES 6 10 20 40 60 100 FIG 4 . - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE (pF) FIG.3 - TYPICAL FORWARD CHARACTERISTICS 10 Pulse Width = 300 μs 2% Duty Cycle 1.0 4 NUMBER OF CYCLES AT 60Hz TJ = 25 °C 100 TJ = 25 °C 50 10 5 1 1 2 4 10 20 40 100 REVERSE VOLTAGE, VOLTS 0.1 FIG. 5 - TYPICAL REVERSE CHARACTERISTICS 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE, VOLTS 1.8 2.0 Ta = 100 °C REVERSE CURRENT, MICROAMPERES 0.01 0 1.0 0.1 Ta = 25 °C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 03 : March 31, 2005