TAK_CHEONG TC1N914B

®
SEM IC O N DU C TO R
500 mW DO-35 Hermetically
Sealed Glass Fast Switching
Diodes
AXIAL LEAD
DO35
Absolute Maximum Ratings
Symbol
PD
TSTG
TJ
WIV
TA = 25°C unless otherwise noted
Parameter
Power Dissipation
Storage Temperature Range
Operating Junction Temperature
Value
Units
500
mW
-65 to +150
°C
+175
°C
Working Inverse Voltage
75
V
IO
Average Rectified Current
150
mA
IFM
Non-repetitive Peak Forward Current
Peak Forward Surge Current
(Pulse Width = 1.0 µsecond)
450
mA
2
A
IFSURGE
DEVICE MARKING DIAGRAM
L
xx
xx
L
TC1Nxxxx
: Logo
: Device Code
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
Fast Switching Device (TRR <4.0 nS)
DO-35 Package (JEDEC)
Through-Hole Device Type Mounting
Anode
Cathode
Hermetically Sealed Glass
Compression Bonded Construction
All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable
ELECTRICAL SYMBOL
RoHS Compliant
Solder Hot Dip Tin (Sn) Terminal Finish
Cathode Indicated By Polarity Band
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Limits
Test Condition
Min
BV
IR
VF
Breakdown Voltage
Reverse Leakage Current
Forward Voltage
TC1N4448, TC1N914B
TC1N4148
TC1N4448, TC1N914B
TRR
Reverse Recovery Time
IR=100µA
100
IR=5µA
75
Unit
Max
Volts
VR=20V
25
nA
VR=75V
5
µA
IF=5mA
0.62
0.72
IF=10mA
1.0
IF=100mA
1.0
Volts
IF=10mA, VR=6V
RL=100Ω
4
nS
4
pF
IRR=1mA
C
Capacitance
Number: DB-036
October 2008 / F
VR=0V, f=1MHZ
Page 1
TC1N4148/TC1N4448/TC1N914B
TAK CHEONG
TAK CHEONG
®
SEM IC O N DU C TO R
Typical Characteristics
1.5
400
Total Capacitance [pF]
PD - Power Dissipation [mW]
500
300
200
100
f = 1MHz
Ta = 25℃
1.0
0.5
0.0
0
0
25
50
75
100
125
150
175
0
200
5
10
Temperature [℃ ]
15
20
25
30
VR - Reverse Voltage [V]
Figure 1. Power Dissipation vs Ambient Temperature
Figure 2. Total Capacitance
Valid provided leads at a distance of 0.8mm from case are kept at
ambient temperature
60
Ta=25℃
IR - Leakage Current [nA]
BV - Reverse Voltage [V]
160
150
140
130
120
110
40
30
20
10
0
1
10
100
10
IR - Reverse Current [uA]
Figure 3. Reverse Voltage vs Reverse Current
BV – 1.0uA to 100uA
1500
1400
Ta=25℃
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0.001
100
1000
0.100
10.000
IF - Forw ard Current [m A]
1000.000
Figure 5. Forward Voltage vs Forward Current
VF – 0.001mA to 800mA
Number: DB-036
October 2008 / F
VR - Reverse Voltage [V]
Figure 4. Reverse Current vs Reverse Voltage
IR – 10V to 100V
VF - Forward Voltage (mV)
VF - Forward Voltage [mV]
Ta=25℃
50
800
600
Ta= -40℃
Ta=25℃
400
Ta=65℃
Ta=125℃
200
0
0.01
0.1
1
10
IF - Forw ard Current (m A)
100
Figure 6. Forward Voltage vs Ambient Temperature
VF – 0.01mA to 100mA (-40 to +125 Deg C)
Page 2
TAK CHEONG
®
SEM IC O N DU C TO R
Package Outline
Package
Case Outline
DO-35
DO-35
DIM
Millimeters
Inches
Min
Max
Min
Max
A
0.46
0.55
0.018
0.022
B
3.05
4.00
0.120
0.157
C
25.40
38.10
1.000
1.500
D
1.53
2.00
0.060
0.079
Notes:
1.
2.
All dimensions are within JEDEC standard.
DO35 polarity denoted by cathode band.
Number: DB-036
October 2008 / F
Page 3
TAK CHEONG
®
DISC LA I MER NOTIC E
NOTICE
The information presented in this document is for reference only. Tak Cheong reserves the right to make
changes without notice for the specification of the products displayed herein.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not
designed to be used with equipment or devices which require high level of reliability and the malfunction of with
would directly endanger human life (such as medical instruments, transportation equipment, aerospace
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such
improper use of sale.
This publication supersedes & replaces all information reviously supplied. For additional information, please visit
our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance.
Number: DB-100
April 14, 2008 / A