TAK CHEONG SEMI CO N D U C T O R 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators Absolute Maximum Ratings AXIAL LEAD DO35 TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature Value Units 500 mW -65 to +175 °C +175 °C DEVICE MARKING DIAGRAM L 79T xxx L : Logo Device Code : TCBZX79Txxx T : VZ tolerance B or C These ratings are limiting values above which the serviceability of the diode may be impaired. Specification Features: Zener Voltage Range 2.0 to 75 Volts DO-35 Package (JEDEC) Through-Hole Device Type Mounting Cathode Hermetically Sealed Glass Anode Compression Bonded Construction All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable ELECTRICAL SYMBOL RoHS Compliant Solder Hot Dip Tin (Sn) Terminal Finish Cathode Indicated By Polarity Band Electrical Characteristics Device Type TCBZX79C 2V0 TCBZX79C 2V2 TCBZX79C 2V4 TCBZX79C 2V7 TCBZX79C 3V0 TCBZX79C 3V3 TCBZX79C 3V6 TCBZX79C 3V9 TCBZX79C 4V3 TCBZX79C 4V7 TCBZX79C 5V1 TCBZX79C 5V6 TCBZX79C 6V2 TCBZX79C 6V8 TCBZX79C 7V5 TCBZX79C 8V2 TCBZX79C 9V1 TCBZX79C 10 TCBZX79C 11 TCBZX79C 12 TCBZX79C 13 Number: DB-033 June 2008 / F VZ @ IZT (Volts) Min Max 1.88 2.12 2.08 2.33 2.28 2.56 2.51 2.89 2.8 3.2 3.1 3.5 3.4 3.8 3.7 4.1 4 4.6 4.4 5 4.8 5.4 5.2 6 5.8 6.6 6.4 7.2 7 7.9 7.7 8.7 8.5 9.6 9.4 10.6 10.4 11.6 11.4 12.7 12.4 14.1 TA = 25°C unless otherwise noted ZZT @ IZT IZT (Ω) (mA) Max 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 100 100 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 IZK (mA) ZZK @ IZK (Ω) Max IR @ VR (μA) Max VR (Volts) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 600 600 600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 150 150 100 75 50 25 15 10 5 3 2 1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 1 1 1 1 1 1 1 1 1 2 2 2 4 4 5 5 6 7 8 8 8 Page 1 TCBZX79C2V0 through TCBZX79C75 TCBZX79B2V4 through TCBZX79B75 ® ® TAK CHEONG SEMI CO N D U C T O R Electrical Characteristics TA = 25°C unless otherwise noted ZZT @ IZT VZ @ IZT IZT (Volts) Device Type (Ω) (mA) Max Min Max TCBZX79C 15 13.8 15.6 5 30 TCBZX79C 16 15.3 17.1 5 40 TCBZX79C 18 16.8 19.1 5 45 TCBZX79C 20 18.8 21.2 5 55 TCBZX79C 22 20.8 23.3 5 55 TCBZX79C 24 22.8 25.6 5 70 TCBZX79C 27 25.1 28.9 2 80 TCBZX79C 30 28 32 2 80 TCBZX79C 33 31 35 2 80 TCBZX79C 36 34 38 2 90 TCBZX79C 39 37 41 2 130 TCBZX79C 43 40 46 2 150 TCBZX79C 47 44 50 2 170 TCBZX79C 51 48 54 2 180 TCBZX79C 56 52 60 2 200 TCBZX79C 62 58 66 2.5 215 TCBZX79C 68 64 72 2.5 240 TCBZX79C 75 70 80 2.5 255 VF Forward Voltage = 1.5 V Maximum @ IF = 100 mA for all types Device Type TCBZX79B 2V4 TCBZX79B 2V7 TCBZX79B 3V0 TCBZX79B 3V3 TCBZX79B 3V6 TCBZX79B 3V9 TCBZX79B 4V3 TCBZX79B 4V7 TCBZX79B 5V1 TCBZX79B 5V6 TCBZX79B 6V2 TCBZX79B 6V8 TCBZX79B 7V5 TCBZX79B 8V2 TCBZX79B 9V1 TCBZX79B 10 TCBZX79B 11 TCBZX79B 12 TCBZX79B 13 TCBZX79B 15 TCBZX79B 16 TCBZX79B 18 TCBZX79B 20 TCBZX79B 22 TCBZX79B 24 TCBZX79B 27 TCBZX79B 30 TCBZX79B 33 TCBZX79B 36 TCBZX79B 39 TCBZX79B 43 TCBZX79B 47 TCBZX79B 51 Number: DB-033 June 2008 / F VZ @ IZT (Volts) Min Max 2.35 2.45 2.65 2.75 2.94 3.06 3.23 3.37 3.53 3.67 3.82 3.98 4.21 4.39 4.61 4.79 5.00 5.20 5.49 5.71 6.08 6.32 6.66 6.94 7.33 7.63 8.04 8.36 8.92 9.28 9.80 10.20 10.78 11.22 11.76 12.24 12.74 13.26 14.70 15.30 15.68 16.32 17.64 18.36 19.60 20.40 21.56 22.44 23.52 24.48 26.46 27.54 29.40 30.60 32.34 33.66 35.28 36.72 38.22 39.78 42.14 43.86 46.06 47.94 49.98 52.02 IZK (mA) ZZK @ IZK (Ω) Max IR @ VR (μA) Max VR (Volts) 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 200 200 225 225 250 250 300 300 325 350 350 375 375 400 425 1000 1000 1000 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 10.5 11.2 12.6 14 15.4 16.8 18.9 21 23.1 25.2 27.3 30.1 32.9 35.7 39.2 43.4 47.6 52.5 IZT (mA) ZZT @ IZT (Ω) Max IZK (mA) ZZK @ IZK (Ω) Max IR @ VR (μA) Max VR (Volts) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 2 2 2 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 80 80 80 90 130 150 170 180 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 300 300 325 350 350 375 375 400 100 75 50 25 15 10 5 3 2 1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 1 1 1 1 1 1 1 2 2 2 4 4 5 5 6 7 8 8 8 10.5 11.2 12.6 14 15.4 16.8 18.9 21 23.1 25.2 27.3 30.1 32.9 35.7 Page 2 ® TAK CHEONG SEMI CO N D U C T O R Electrical Characteristics TA = 25°C unless otherwise noted ZZT @ IZT VZ @ IZT IZT (Volts) Device Type (Ω) (mA) Max Min Max TCBZX79B 56 54.88 57.12 2 200 TCBZX79B 62 60.76 63.24 2.5 215 TCBZX79B 68 66.64 69.36 2.5 240 TCBZX79B 75 73.50 76.50 2.5 255 VF Forward Voltage = 1.5 V Maximum @ IF = 100 mA for all types IZK (mA) ZZK @ IZK (Ω) Max IR @ VR (μA) Max VR (Volts) 0.5 0.5 0.5 0.5 425 430 447 470 0.05 0.05 0.05 0.05 39.2 43.4 47.6 52.5 Notes: 1. TOLERANCE AND VOLTAGE DESIGNATION The type numbers listed have zener voltage as shown. 2. SPECIALS AVAILABLE INCLUDE Nominal zener voltages between the voltages shown and tighter voltage, for detailed information on price, availability and delivery, contact you nearest Tak Cheong representative. 3. ZENER VOLTAGE (VZ) MEASUREMENT The zener voltage is measured under pulse conditions such that TJ is no more than 2℃ above TA. 4. ZENER IMPEDANCE (ZZ) DERIVATION Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the dc zener current (IZT) is superimposed to IZT . Number: DB-033 June 2008 / F Page 3 ® TAK CHEONG SEMI CO N D U C T O R Typical Characteristics 1000 Total Capacitance [pF] PD-Power Passipation [mW] 600 500 400 300 200 f = 1MHz Ta = 25℃ VR = 0V 100 VR = 2V 100 VR = 30V 1 0 40 80 120 160 Temperature [℃ ] 0 200 20 40 VZ - Reverse Voltage [V] Figure 1. Power Dissipation vs Ambient Temperature 60 80 Figure 2. Total Capacitance Valid provided leads at a distance of 0.8mm from case are kept at ambient temperature 1000 1000 Iz=1mA Ta = 25℃ Ta = 25℃ Iz=2mA 100 Forward Current [mA] Differential Zener Impedance [Ω] VR = 20V 10 0 Iz=5mA Iz=10mA 10 1 100 10 1 0.1 0.1 1 10 VZ - Reverse Voltage [V] 0 100 0.2 0.4 0.6 0.8 VF - Forw ard Voltage [m V] 1 1.2 Figure 4. Forward Current vs. Forward Voltage Figure 3. Differential Impedance vs. Zener Voltage 300 100 PD = 500mW Ta = 25℃ Reverse Current [mA] PD = 500mW Ta = 25℃ 250 Reverse Current [mA] VR = 5V 200 150 100 50 10 1 0.1 0.01 0 0 2 4 6 VZ - Reverse Voltage [V] 8 Figure 5. Reverse Current vs. Reverse Voltage Number: DB-033 June 2008 / F 10 15 25 35 45 55 65 VZ - Reverse Voltage [V] 75 Figure 6. Reverse Current vs. Reverse Voltage Page 4 ® TAK CHEONG SEMI CO N D U C T O R Package Outline Package Case Outline DO-35 DO-35 DIM Millimeters Inches Min Max Min Max A 0.46 0.55 0.018 0.022 B 3.05 5.08 0.120 0.200 C 25.40 38.10 1.000 1.500 D 1.53 2.28 0.060 0.090 Notes: 1. 2. All dimensions are within JEDEC standard. DO35 polarity denoted by cathode band. Number: DB-033 June 2008 / F Page 5 TAK CHEONG ® DISC LA I MER NOTIC E NOTICE The information presented in this document is for reference only. Tak Cheong reserves the right to make changes without notice for the specification of the products displayed herein. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such improper use of sale. This publication supersedes & replaces all information reviously supplied. For additional information, please visit our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance. Number: DB-100 April 14, 2008 / A