BUD700D Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D Monolithic integrated C-E-free-wheel diode Simple-sWitch-Off Transistor (SWOT) HIGH SPEED technology Planar passivation 100 kHz switching rate D D D D D Very low switching losses Very low dynamic saturation Very low operating temperature Optimized RBSOA High reverse voltage Applications Electronic lamp ballast circuits 2 94 8965 1 1 3 94 8964 2 3 BUD700D 1 Base 2 Collector 3 Emitter BUD700D –SMD 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage g Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Document Number 86505 Rev. 1, 20–Jan–99 Test Conditions Tcase ≤ 50°C Symbol VCEO VCEW VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 400 500 700 11 2 3 0.75 1 20 150 –65 to +150 Unit V V V V A A A A W °C °C www.vishay.de • FaxBack +1-408-970-5600 1 (8) BUD700D Vishay Telefunken Maximum Thermal Resistance Tcase = 25°C, unless otherwise specified Parameter Junction case Test Conditions Symbol RthJC Value 5 Unit K/W Electrical Characteristics Tcase = 25°C, unless otherwise specified Parameter Transistor Collector cut-off current Test Conditions Symbol VCE = 700 V VCE = 700 V; Tcase = 150°C Collector-emitter breakdown IC = 300 mA; L = 125 mH; voltage (figure 1) Imeasure = 100 mA Emitter-base breakdown voltage IE = 1 mA Collector-emitter saturation voltage IC = 0.3 A; IB = 0.1 A Base-emitter saturation voltage IC = 0.3 A; IB = 0.1 A DC forward current transfer ratio VCE = 2 V; IC = 10 mA VCE = 2 V; IC = 0.3 A VCE = 5 V; IC = 2 A Collector-emitter working voltage VS = 50 V; L = 1 mH; IC = 2 A; IB1 = 0.7 A; –IB2 = 0.2 A; –VBB = 5 V Dynamic saturation voltage IC = 1 A; IB = 0.2 A; t = 1 ms y g IC = 1 A; IB = 0.2 A; t = 3 ms Gain bandwidth product IC = 200 mA; VCE = 10 V; f = 1 MHz Free-wheel diode Forward voltage IF = 0.7 A Min Typ ICES ICES V(BR)CEO 400 V(BR)EBO VCEsat VBEsat hFE hFE hFE VCEW 11 VCEsatdyn VCEsatdyn fT 0.1 0.9 10 10 4 500 Max Unit 50 0.5 mA mA V 0.2 1 V V V 6 V 15 4 V V MHz 1.2 V 4 VF Switching Characteristics Tcase = 25°C, unless otherwise specified Parameter Test Conditions Application specific switching time measured with Nylos3 Resistive load (figure 2) Turn on time IC = 330 mA; IB1 = 85 mA; –IB2 = 170 mA; VS = 250 V Storage time Fall time www.vishay.de • FaxBack +1-408-970-5600 2 (8) Symbol Min Typ Max Unit tx 0.75 ms ton ts tf 0.25 3 0.4 ms ms ms Document Number 86505 Rev. 1, 20–Jan–99 BUD700D Vishay Telefunken 94 8863 V S2 IC + 10 V IB w Imeasure IC 5 IC LC + V S1 + 0 to 30 V VCE V(BR)CEO 3 Pulses tp T tp I(BR)R + 0.1 + 10 ms V(BR)CEO 100 mW Figure 1. Test circuit for V(BR)CE0 94 8852 IB IB1 0 t IC –IB2 RC (1) VCE IB1 IB VCC IC 0.9 IC RB VBB + 0.1 IC (1) Fast electronic switch t tr td ton ts toff tf Figure 2. Test circuit for switching characteristics – resistive load Document Number 86505 Rev. 1, 20–Jan–99 www.vishay.de • FaxBack +1-408-970-5600 3 (8) BUD700D Vishay Telefunken Typical Characteristics (Tcase = 25_C unless otherwise specified) 100.00 3 Ptot – Total Power Dissipation ( W ) I C – Collector Current ( A ) 4 0.1 x IC < IB2 < 0.5 x IC VCEsat < 2 V 2 1 5K/W 10.00 0 1.00 12.5K/W 50K/W RthJA=135K/W 0.01 0 100 200 300 400 500 VCE – Collector Emitter Voltage ( V ) 13723 0 1.50 0.15A 0.1A 1.00 0.75 IB=0.05A 0.50 0.25 1 2 3 4 5 6 7 8 9 10 11 12 VCE – Collector Emitter Voltage ( V ) 13725 VCEsat – Collector Emitter Saturation Voltage ( V ) IC – Collector Current ( A ) 1.75 0.25A 0.2A 0 0 h FE – Forward DC Current Transfer Ratio h FE – Forward DC Current Transfer Ratio 10V 5V VCE=2V 1.00 IC – Collector Current ( A ) www.vishay.de • FaxBack +1-408-970-5600 4 (8) 125 150 2A 1A 0.10 0.35A IC=0.2A 0.01 0.01 0.10 1.00 10.00 IB – Base Current ( A ) Figure 7. VCEsat vs. IB 10 Figure 5. hFE vs. IC 100 1.00 13726 100 0.10 75 10.00 Figure 4. IC vs. VCE 1 0.01 50 Figure 6. Ptot vs.Tcase 2.00 1.25 25 Tcase – Case Temperature ( °C ) 13724 Figure 3. VCEW – Diagram 13727 25K/W 0.10 10.00 13728 100 Tj = 125°C 10 75°C 25°C VCE=2V 1 0.01 0.10 1.00 10.00 IC – Collector Current ( A ) Figure 8. hFE vs. IC Document Number 86505 Rev. 1, 20–Jan–99 BUD700D Vishay Telefunken 10 0.7 saturated switching R-load IC = 0.35A, IB1 = 0.04A saturated switching R-load IC = 0.35A, IB1 = 0.04A 0.6 t f – Fall Time ( ms ) t s – Storage Time ( m s ) 8 6 4 Tcase = 125°C 0.5 0.4 Tcase = 125°C 0.3 0.2 2 0.1 Tcase = 25°C Tcase = 25°C 0 0 0 1 2 3 4 5 6 –IB2/IB1 13729 0 2 3 4 5 6 –IB2/IB1 Figure 9. ts vs. –IB2/IB1 Figure 12. tf vs. –IB2/IB1 10 0.7 saturated switching R-load IC = 0.35A, IB1 = 0.085A saturated switching R-load IC = 0.35A, IB1 = 0.085A 0.6 t f – Fall Time ( ms ) 8 t s – Storage Time ( m s ) 1 13730 6 4 Tcase = 125°C 0.5 0.4 Tcase = 125°C 0.3 Tcase = 25°C 0.2 2 0.1 Tcase = 25°C 0 0 0 1 2 3 4 –IB2/IB1 13731 Figure 10. ts vs. –IB2/IB1 0 13732 1 2 3 4 –IB2/IB1 Figure 13. tf vs. –IB2/IB1 I F – Forward Current ( A ) 10.00 1.00 0.10 0.01 0 13733 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V ) Figure 11. IF vs. VF Document Number 86505 Rev. 1, 20–Jan–99 www.vishay.de • FaxBack +1-408-970-5600 5 (8) BUD700D Vishay Telefunken Dimensions in mm 14292 www.vishay.de • FaxBack +1-408-970-5600 6 (8) Document Number 86505 Rev. 1, 20–Jan–99 BUD700D Vishay Telefunken 14293 For ordering TO 252 add SMD to the type number (i.e. BUD700D –SMD) Document Number 86505 Rev. 1, 20–Jan–99 www.vishay.de • FaxBack +1-408-970-5600 7 (8) BUD700D Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de • FaxBack +1-408-970-5600 8 (8) Document Number 86505 Rev. 1, 20–Jan–99