SFF10N60
Silicon N-Channel MOSFET
Features
�
10A,600V ,RDS(on)(Max0.75Ω)@VGS=10V
�
Ultra-low Gate Charge(34nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Improved dv/dt capability
General Description
This Power
MOSFET is produced using Winsemi's advanced
planar stripe,DMOS technology. This latest technology has been
especially designed to minimize on -state resistance,have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies , power
factor correction ,UPS and a electronic lamp ballast base on half
bridge.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
600
V
Continuous Drain Current (@Tc=25℃)
10*
A
Continuous Drain Current (@Tc=100℃)
6.0*
A
40*
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
713
mJ
EAR
Repetitive Avalanche Energy
(Note1)
18
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note3)
4.5
V/ns
Total Power Dissipation (@Tc=25℃)
50
W
Derating Factor above25℃
0.4
W/℃
-55~150
℃
300
℃
PD
TJ,Tstg
Junction and Storage Temperature
TL
Channel Temperature
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance, Junction-to-Case
-
-
2.5
℃/W
RQJA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
℃/W
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
SFF10N60
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10µA,VDS=0V
±30
-
-
V
IDSS
VDS=600V,VGS=0V
-
-
1
µA
V(BR)DSS
ID=250µA,VGS=0V
500
-
-
V
Gate threshold voltage
VGS(th)
VDS=10V,ID=250µA
3
-
3.5
V
Drain-source ON resistance
RDS(ON)
VGS=10V,ID=4.75A
-
0.66
0.75
Ω
Forward Trans conductance
gfs
VDS=50V,ID=4.75A
-
8.2
-
S
Input capacitance
Ciss
VDS=25V,
-
1610
2065
Reverse transfer capacitance
Crss
VGS=0V,
-
156
210
Output capacitance
Coss
f=1MHz
-
20
26
VDD=300V,
-
68
91
ton
ID=10A,
-
109
150
tf
RG=25Ω
-
214
300
-
85
165
-
34
45
-
6.9
-
-
12
-
Gate leakage current
Gate-source breakdown voltage
Drain cut -off current
Drain-source breakdown voltage
Rise time
Turn-on time
tr
Switching time
pF
ns
Fall time
Turn-off time
(Note4,5)
toff
Total gate charge(gate-source
VDD=480V,
Qg
plus gate-drain
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller")Charge
Qgd
ID=10A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
10
A
Pulse drain reverse current
IDRP
-
-
-
38
A
Forward voltage(diode)
VDSF
IDR=10A,VGS=0V
-
1.05
1.4
V
Reverse recovery time
trr
IDR=10A,VGS=0V,
-
442
633
ns
Reverse recovery charge
Qrr
dIDR /dt=100 A / µs
-
2.16
3.24
µC
Note 1. Repeativity rating: pulse width limited by junction temperature
2. L=14.5mH, IAS=10A, VDD=50V, RG=25Ω, Starting TJ=25℃
3. ISD≤10A, di/dt≤300A/us, VDD<BVDSS, STARTING TJ=25℃
4. Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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SFF10N60
Fig.1 On -State Characteristics
Fig.3 Capacitance Variation vs
Fig.2 Transfer characteristics
Fig.4 On-Resistance Variation Energy vs
Drain Current and Gate Voltage
Drain Voltage
Fig.5 On-Resistance Variation vs
Fig.6 Gate Charge characteristics
Junction temperature
3/7
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SFF10N60
Fig.7 Maximum Safe Operation Area
Fig.8 diode Forward voltage Variation
vs Source Current and Temperature
Fig.9 Transient Thermal response Curve
4/7
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SFF10N60
Fig.10 Gate Test Circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive switching Test Circuit& Waveform
5/7
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SFF10N60
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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SFF10N60
TO-220F Package Dimension
Unit :mm
7/7
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