9&( ,& 9 $ ,*%7'LH 60;0 'LHVL]H[PP Doc. No. 5SYA1620-01 July 03 • • • • /RZORVVWKLQ,*%7GLH +LJKO\UXJJHG637GHVLJQ /DUJHIURQWERQGDEOHDUHD )URQWVLGHSDVVLYDWLRQSRO\LPLGH 0D[LPXPUDWHGYDOXHV 3DUDPHWHU Collector-emitter voltage 6\PERO &RQGLWLRQV VCES DC collector current IC Peak collector current ICM Gate-emitter voltage VGE = 0 V, Tvj ≥ 25 °C Limited by Tvjmax VGES IGBT short circuit SOA tpsc Junction temperature Tvj PLQ -20 VCC = 1300 V, VCEM ≤ 1700 V VGE ≤ 15 V, Tvj ≤ 125 °C 1) Maximum rated values indicate limits beyond which damage to the device may occur $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH -40 PD[ 8QLW 1700 V 100 A 200 A 20 V 10 µs 150 °C 60;0 ,*%7FKDUDFWHULVWLFYDOXHV 3DUDPHWHU 6\PERO &RQGLWLRQV PLQ Collector (-emitter) breakdown voltage V(BR)CES 1700 Collector-emitter saturation voltage VCE sat VGE = 0 V, IC = 1 mA, Tvj = 25 °C IC = 100 A, VGE = 15 V Tvj = 25 °C VCE = 1700 V, VGE = 0 V Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C VGE(TO) Gate charge Qge Input capacitance Cies 2.1 2.3 800 4.5 6.5 V IC = 100 A, VCE = 900 V, VGE = -15 ..15 V 880 0.40 Internal gate resistance RGint 4 Turn-on delay time td(on) Fall time Turn-on switching energy Turn-off switching energy Short circuit current tf Eon Eoff ISC nC 9.5 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C Cres td(off) µA nA Reverse transfer capacitance Turn-off delay time µA 500 Coes tr V -500 Output capacitance Rise time 8QLW V 100 Tvj = 125 °C IC = 4 mA, VCE = VGE, Tvj = 25 °C 2.7 2.6 Tvj = 25 °C ICES PD[ V Tvj = 125 °C Collector cut-off current Gate-emitter threshold voltage W\S 0.64 VCC = 900 V, IC = 100 A, RG = 10 Ω, VGE = ±15 V, Lσ = 160 nH, inductive load Tvj = 25 °C 160 Tvj = 125 °C 170 Tvj = 25 °C 100 Tvj = 125 °C 110 VCC = 900 V, IC = 100 A, RG = 10 Ω, VGE = ±15 V, Lσ = 160 nH, inductive load Tvj = 25 °C 400 Tvj = 125 °C 480 Tvj = 25 °C 90 Tvj = 125 °C 110 Tvj = 25 °C 22 VCC = 900 V, IC = 100 A, VGE = ±15 V, RG = 10 Ω, Lσ = 160 nH, inductive load, FWD: 5SLX12H1700 VCC = 900 V, IC = 100 A, VGE = ±15 V, RG = 10 Ω, Lσ = 160 nH, inductive load nF Ω ns ns ns ns mJ Tvj = 125 °C 32 Tvj = 25 °C 17 Tvj = 125 °C 27 mJ tpsc V9GE = 15 V, Tvj = 125 °C, VCC = 1300 V, VCEM 9 470 A $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH Doc. No. 5SYA1620-01 July 03 page 2 of 5 60;0 0HFKDQLFDOSURSHUWLHV 3DUDPHWHU 8QLW Overall die L W x 13.6 13.6 mm exposed L x W (except gate pad) front metal 11.6 x 11.6 mm 1.2 x 1.2 mm 210 ± 15 µm 4 µm 1.2 µm x Dimensions gate pad LxW thickness Metallization 1) front AISi1 back AI / Ti / Ni / Ag 1) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA2033-01 April 02. 2XWOLQHGUDZLQJ G Emitter 1RWHDOOGLPHQVLRQVDUHVKRZQLQPP 7KLVLVDQHOHFWURVWDWLFVHQVLWLYHGHYLFHSOHDVHREVHUYHWKHLQWHUQDWLRQDOVWDQGDUG,(&&KDS,; $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH Doc. No. 5SYA1620-01 July 03 page 3 of 5 60;0 200 200 VCE = 25 V 25 °C 175 175 125 °C 150 150 125 IC [A] IC [A] 125 100 100 75 75 50 50 125 °C 25 °C 25 25 VGE = 15 V 0 0 0 1 2 3 4 0 5 1 2 3 4 )LJ Typical onstate characteristics 0.300 7 8 9 10 11 12 Typical transfer characteristics 0.100 VCC = 900 V RG = 10 ohm VGE = ±15 V Tvj = 125 °C Lσ = 160 nH 0.250 VCC = 900 V IC = 100 A VGE = ±15 V Tvj = 125 °C Lσ = 160 nH 0.090 0.080 0.070 Eon, Eoff [J] 0.200 Eon, Eoff [J] 6 VGE [V] VCE [V] )LJ 5 0.150 0.100 0.060 Eon 0.050 0.040 0.030 Eoff Eon 0.020 0.050 Eoff 0.010 0.000 0.000 0 50 100 150 200 250 0 300 )LJ Typical switching characteristics vs collector current 10 20 30 40 50 60 70 RG [ohm] Ic [A] )LJ Typical switching characteristics vs gate resistor $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH Doc. No. 5SYA1620-01 July 03 page 4 of 5 60;0 100 20 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV VCC = 900 V 15 Cies 10 C [nF] VGE [V] VCC = 1300 10 Coes 1 5 Cres IC = 100 A Tvj = 25 °C 0 0.1 0.0 )LJ 0.1 0.2 0.3 0.4 0.5 Qg [µC] 0.6 Typical gate charge characteristics 0.7 0.8 0 )LJ 5 10 15 20 VCE [V] 25 30 35 Typical capacitances vs collector-emitter voltage This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH $%%6ZLW]HUODQG/WG 6HPLFRQGXFWRUV Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1620-01 July 03