VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1273 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1637-00 July 06 • Low loss thin IGBT die • Highly rugged SPT design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions VCES DC collector current IC Peak collector current ICM Gate-emitter voltage 1) 1) VGE = 0 V, Tvj ≥ 25 °C Limited by Tvjmax VGES IGBT short circuit SOA tpsc Junction temperature Tvj min -20 VCC = 900 V, VCEM ≤ 1200 V VGE ≤ 15 V, Tvj ≤ 125 °C Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. -40 max Unit 1200 V 150 A 300 A 20 V 10 µs 150 °C 5SMX 12M1273 IGBT characteristic values 2) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES 1200 Collector-emitter saturation voltage VCE sat IC = 150 A, VGE = 15 V Tvj = 25 °C VCE = 1200 V, VGE = 0 V Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C VGE(TO) Gate charge Qge Input capacitance Cies 1.9 2.15 IC = 150 A, VCE = 600 V, VGE = -15 ..15 V 500 4.5 6.5 V 1110 0.46 Internal gate resistance RGint 3 Turn-on delay time td(on) Fall time Turn-on switching energy Turn-off switching energy Short circuit current tf Eon Eoff ISC nC 10.9 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C Cres td(off) µA nA Reverse transfer capacitance Turn-off delay time µA 200 Coes tr V -200 Output capacitance Rise time Unit V 100 Tvj = 125 °C IC = 6 mA, VCE = VGE, Tvj = 25 °C 2.4 2.4 Tvj = 25 °C ICES max V Tvj = 125 °C Collector cut-off current Gate-emitter threshold voltage 2) VGE = 0 V, IC = 1 mA, Tvj = 25 °C typ 0.72 VCC = 600 V, IC = 150 A, RG = 8.2 Ω, VGE = ±15 V, Lσ = 60 nH, inductive load Tvj = 25 °C 170 Tvj = 125 °C 200 Tvj = 25 °C 75 Tvj = 125 °C 85 VCC = 600 V, IC = 150 A, RG = 8.2 Ω, VGE = ±15 V, Lσ = 60 nH, inductive load Tvj = 25 °C 410 Tvj = 125 °C 510 Tvj = 25 °C 50 Tvj = 125 °C 60 Tvj = 25 °C 14 VCC = 600 V, IC = 150 A, VGE = ±15 V, RG = 8.2 Ω, Lσ = 60 nH, inductive load, FWD: 3x 5SLX 12E1200 VCC = 600 V, IC = 150 A, VGE = ±15 V, RG = 8.2 Ω, Lσ = 60 nH, inductive load nF Ω ns ns ns ns mJ Tvj = 125 °C 21 Tvj = 25 °C 10 mJ Tvj = 125 °C tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 900 V, VCEM ≤ 1200 V 15 620 A Characteristic values according to IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1637-00 July 06 page 2 of 5 5SMX 12M1273 Mechanical properties Parameter Unit Dimensions Overall die L x W 13.6 x 13.6 mm exposed L x W (except gate pad) front metal 12.0 x 12.0 mm 1.19 x 1.19 mm 130 ± 20 µm 4 µm 1.8 µm gate pad LxW thickness Metallization 3) 3) front (E) AlSi1 back (C) Al / Ti / Ni / Ag For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline drawing G Emitter Note: all dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1637-00 July 06 page 3 of 5 5SMX 12M1273 300 300 VCE = 20 V 250 250 25 °C 125 °C 200 IC [A] IC [A] 200 150 150 100 100 50 50 125 °C 25 °C VGE = 15 V 0 0 0 1 2 3 0 4 1 2 3 4 5 VCE [V] Fig. 1 6 7 8 9 10 11 12 VGE [V] Typical on-state characteristics Fig. 2 0.08 Typical transfer characteristics 0.07 VCC = 600 V RG = 8.2 ohm VGE = ±15 V Tvj = 125 °C Lσ = 60 nH 0.07 0.06 VCC = 600 V IC = 150 A VGE = ±15 V Tvj = 125 °C Lσ = 60 nH 0.06 0.05 Eon, E off [J] Eon, Eoff [J] 0.05 0.04 Eon 0.04 0.03 Eon 0.03 Eoff 0.02 0.02 Eoff 0.01 0.01 0 0 0 50 100 150 200 250 0 300 Typical switching characteristics vs collector current 20 30 40 50 RG [ohm] IC [A] Fig. 3 10 Fig. 4 Typical switching characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1637-00 July 06 page 4 of 5 5SMX 12M1273 100 20 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV VCC = 600 V 15 Cies 10 C [nF] VGE [V] VCC = 800 V 10 Coes 1 5 Cres IC = 150 A Tvj = 25 °C 0 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Qg [µC] Fig. 5 Typical gate charge characteristics 0 Fig. 6 5 10 15 20 VCE [V] 25 30 35 Typical capacitances vs collector-emitter voltage ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1637-00 July 06