ADPOW APL502L

APL502B2
APL502L
500V 58A 0.090Ω
B2
LINEAR MOSFET
T-MAX™
TO-264
Linear Mosfets are optimized for applications operating in the Linear
region where concurrent high voltage and high current can occur at
near DC conditions (>100 msec).
L
D
• Higher FBSOA
• Popular T-MAX™ or TO-264 Package
• Higher Power Dissipation
G
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APL502B2-L
UNIT
500
Volts
58
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
730
Watts
Linear Derating Factor
5.84
W/°C
PD
TJ,TSTG
232
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
-55 to 150
Operating and Storage Junction Temperature Range
TL
1
58
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
Amps
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions / Part Number
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
500
Volts
ID(ON)
On State Drain Current
58
Amps
IDSS
IGSS
VGS(TH)
(VDS > ID(ON) x R DS(ON) Max, VGS = 12V)
Drain-Source On-State Resistance
2
MAX
0.09
(VGS = 12V, 29A)
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
250
(VDS = VGS, ID = 2.5mA)
±100
nA
4
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Ohms
µA
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage
UNIT
8-2003
RDS(ON)
2
TYP
050-5896 Rev D
Symbol
APL502B2-L
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
MIN
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
7485
9000
Coss
Output Capacitance
VDS = 25V
1290
1810
Reverse Transfer Capacitance
f = 1 MHz
617
930
Turn-on Delay Time
VGS = 15V
13
26
Crss
td(on)
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
VDD = 250V
27
54
ID = 29A @ 25°C
56
84
RG = 0.6Ω
16
20
TYP
MAX
UNIT
pF
ns
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
.17
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 1.78mH, R = 25Ω, Peak I = 58A
j
G
L
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.18
0.9
0.14
0.7
0.12
0.10
0.5
Note:
0.08
0.06
PDM
ZΘJC, THERMAL IMPEDANCE (°C/W)
0.16
0.3
t2
0.04
Duty Factor D = t1/t2
0.1
0.02
10-5
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
0.05
0
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
RC MODEL
Junction
temp. ( ”C)
0.0602
0.0158F
0.109
0.305F
8-2003
Power
(Watts)
050-5896 Rev D
t1
Case temperature
FIGURE 1a, TRANSIENT THERMAL IMPEDANCE MODEL
1.0
UNIT
°C/W
Typical Performance Curves
120
APL502B2-L
120
VGS=10V, 15 V
8V
80
7.5 V
60
7V
40
6.5 V
6V
20
100
8V
80
7.5 V
60
7V
40
6.5 V
6V
20
5.5 V
5.5 V
0
0
60
40
TJ = +125°C
20
TJ = -55°C
TJ = +25°C
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
ID, DRAIN CURRENT (AMPERES)
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
1.30
1.15
NORMALIZED TO
= 10V @ 29A
V
GS
1.20
VGS=10V
1.10
1.00
0.90
0.80
VGS=20V
0.70
0
20
40
60
80
100
120
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
0
50
100
150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
8-2003
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
(NORMALIZED)
80
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3,LOW VOLTAGE OUTPUT CHARACTERISTICS
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN
0
50
100
150
200
250
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS
050-5896 Rev D
ID, DRAIN CURRENT (AMPERES)
100
ID, DRAIN CURRENT (AMPERES)
VGS=10, 15V
APL502B2-L
1.2
I
V
D
= 29A
GS
= 12V
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
232
30,000
OPERATION HERE
LIMITED BY RDS (ON)
100
10,000
100µS
10
1mS
5
10mS
100mS
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
1.1
Ciss
5,000
Coss
1,000
Crss
500
DC line
.1
100
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
1
5 10
50 100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
Drain
Drain
20.80 (.819)
21.46 (.845)
4.50 (.177) Max.
050-5896 Rev D
8-2003
0.40 (.016)
0.79 (.031)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Gate
Drain
Source
Source
2.21 (.087)
2.59 (.102)
2.29 (.090)
2.69 (.106)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.