D
TO-254
G
APT1004RCN 1000V 3.6A 4.00Ω
S
TM
POWER MOS IV
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT1004RCN
UNIT
1000
Volts
Drain-Source Voltage
3.6
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
Volts
Total Power Dissipation @ TC = 25°C
125
Watts
Linear Derating Factor
1.0
W/°C
PD
TJ,TSTG
TL
14.4
1
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
ID(ON)
On State Drain Current
RDS(ON)
IDSS
IGSS
VGS(TH)
2
(VDS > ID(ON) x R DS(ON) Max, VGS = 10V)
Drain-Source On-State Resistance
2
TYP
MAX
UNIT
1000
Volts
3.6
Amps
(VGS = 10V, 0.5 ID [Cont.])
4.00
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
MAX
UNIT
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
2
SAFE OPERATING AREA CHARACTERISTICS
Characteristic
Test Conditions
MIN
SOA1
Safe Operating Area
VDS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec.
125
SOA2
Safe Operating Area
IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.
125
ILM
TYP
Watts
3.6
Inductive Current Clamped
Amps
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
050-0017 Rev C
Symbol
APT1004RCN
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
MIN
TYP
MAX
15
22
805
950
115
160
37
60
CDC
Drain-to-Case Capacitance
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
Total Gate Charge
VGS = 10V
35
55
Qgs
Gate-Source Charge
VDD = 0.5 VDSS
4.3
7
ID = ID [Cont.] @ 25°C
18
27
10
20
VDD = 0.5 VDSS
12
24
ID = ID [Cont.] @ 25°C
33
50
16
32
TYP
MAX
Qgd
VGS = 0V
Gate-Drain ("Miller ") Charge
td(on)
f = 1 MHz
Turn-on Delay Time
tr
td(off)
Turn-off Delay Time
tf
pF
VGS = 10V
Rise Time
nC
ns
RG = 1.8Ω
Fall Time
UNIT
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
MIN
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/µs)
Q rr
Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/µs)
(Body Diode)
(VGS = 0V, IS = -ID [Cont.])
UNIT
3.6
14.4
Amps
1.3
Volts
290
580
ns
1.65
3.3
µC
TYP
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
MIN
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
1.00
50
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5
D=0.5
0.2
0.1
0.1
0.05
0.05
0.02
Note:
0.01
0.01
SINGLE PULSE
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-0017 Rev C
1.0
t1
t2
0.005
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
W/°C
APT1004RCN
5
8
VGS=10V
ID, DRAIN CURRENT (AMPERES)
5V
4
3
4.5V
2
1
4V
ID, DRAIN CURRENT (AMPERES)
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
230µ SEC. PULSE TEST
15
TJ = +25°C
10
5
TJ = +125°C
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
4
3
2
1
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
25
4
4.5V
2
4V
2.5
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
2.0
1.5
VGS=10V
VGS=20V
1.0
0.5
0.0
0
2
4
6
8
10
12
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.2
1.1
1.0
0.9
0.8
0.7
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
-50
1.4
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
5V
6
0
4
8
12
16
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
100
200
300
400
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
TJ = -55°C
6V
0
0
20
5.5V
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-0017 Rev C
ID, DRAIN CURRENT (AMPERES)
VGS=5.5V,6V &10V
APT1004RCN
20
10,000
5
1mS
1
10mS
0.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Coss
100
Crss
DC
1
5 10
50 100
500 1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
20
I = I [Cont.]
D
D
16
VDS=100V
VDS=200V
12
VDS=500V
8
Ciss
1,000
100mS
0.1
4
0
C, CAPACITANCE (pF)
100µS
OPERATION HERE
LIMITED BY R
(ON)
DS
0
20
40
60
80
100
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
10µS
10
100
50
20
TJ =+150°C
TJ =+25°C
10
5
2
1
0
0.5
1.0
1.5
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-254AA Package Outline
13.84 (.545)
13.59 (.535)
1.27 (.050)
1.02 (.040)
6.91 (.272)
6.81 (.268)
3.78 (.149) Dia.
3.53 (.139)
20.32 (.800)
20.06 (.790)
17.40 (.685)
16.89 (.665)
13.84 (.545)
13.59 (.535)
31.37 (1.235)
30.35 (1.195)
Drain
Source
Gate
050-0017 Rev C
3.81 (.150) BSC
6.60 (.260)
6.32 (.249)
1.14 (.045) Dia. Typ.
.89 (.035) 3 Leads
3.81 (.150) BSC
Dimensions in Millimeters and (Inches)