Blue Enhanced Quad-Cell Silicon Photodiode PDB-C203 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .168 [4.27] 45° .075 [1.91] 5X Ø.018 [0.46] 1 5 Ø.200 [5.08] PIN CIRCLE Ø.330 [8.38] Ø.320 [8.13] 70° VIEWING Ø.255 [6.48] ANGLE Ø.245 [6.22] 4 B C A D 2 CHIP PERIMETER 3 Ø .362 [9.19] Ø .357 [9.07] .010 [0.25] MAX GLASS ABOVE CAP TOP EDGE 5X .50 [12.7] MIN CHIP DIMENSIONS INCH [mm] ANODE CELL B 4 1 ANODE CELL C 5 CASE GROUND & COMMON CATHODE 4X .050 [1.27] ACTIVE AREA CHIP DIMENSIONS INCH [mm] TO-46 PACKAGE 2 ANODE CELL D ANODE CELL A 3 TO-5 PACKAGE .005 [0.13] GAP DESCRIPTION APPLICATIONS The PDB-C203 is a blue enhanced quad-cell silicon photodiode used for nulling, centering, or measuring small positional changes packaged in a hermetic TO5 metal package. • Emitter Alignment • Position sensing • Medical and Industrial SPECTRAL RESPONSE ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED °C 250 * 1/16 inch from case for 3 seconds max. 0.10 0.00 Wavelength (nm) ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL ISC ID RSH CJ lrange VBR NEP tr CHARACTERISTIC Short Circuit Current Dark Current Shunt Resistance Junction Capacitance Spectral Application Range Breakdown Voltage Noise Equivalent Power Response Time** TEST CONDITIONS H = 100 fc, 2850 K VR = 5V VR = 10 mV VR =10 V, f = 1 MHz Spot Scan I = 10 μA VR = 0V @ l=Peak RL = 50 Ω,VR = 0 V RL = 50 Ω,VR = 10 V MIN 30 250 350 50 TYP 50 0.5 500 8 MAX 1.0 1100 75 8.5x10-15 190 13 UNITS µA nA MΩ pF nm V W/ √ Hz nS **Response time of 10% to 90% is specified at 660nm wavelength light. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com 1150 +240 0.30 0.20 900 +125 0.50 0.40 850 Soldering Temperature* -40 °C °C 800 TS +150 750 Operating Temperature -55 0.70 0.60 700 TO V 650 Storage Temperature 100 600 TSTG UNITS 550 Reverse Voltage MAX 500 VBR MIN 300 PARAMETER Responsivity (A/W) SYMBOL 0.80 450 Low capacitance Blue enhanced High speed Low dark current 400 • • • • 350 FEATURES SCHEMATIC .005 [0.13] GAP 1100 A 1050 D 4X .050 [1.27] ACTIVE AREA 950 B 1000 .150 [3.81] SQUARE C