ANADIGICS AWT6276RM20P8

AWT6276R
TM
HELP PCS/WCDMA 3.4 V/29.5 dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.4
FEATURES
•
InGaP HBT Technology
•
High Efficiency:
45 % @ POUT = +29.5 dBm
21 % @ POUT = +16 dBm
AWT6276R
16 % @ POUT = +7 dBm
•
Low Quiescent Current: 15 mA
•
Low Leakage Current in Shutdown Mode: <1 µA
•
VREF = +2.85 V (+2.75 V min over temp)
•
Optimized for a 50 Ω System
•
Low Profile Miniature Surface Mount Package:
1.1 mm Max
•
RoHS Compliant Package, 250 oC MSL-3
•
HSDPA Compliant (no backoff)
M20 Package
10 Pin 4 mm x 4 mm x 1.1 mm
Surface Mount Module
APPLICATIONS
•
Dual Band WCDMA Wireless Handsets
•
Dual Mode 3GPP Wireless Handsets
PRODUCT DESCRIPTION
The AWT6276 meets the increasing demands for
higher output power in UMTS handsets. The PA module
is optimized for VREF = +2.85 V, a requirement for
compatibility with the Qualcomm® 6275 chipset. The
device is manufactured on an advanced InGaP HBT
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
bias modes that optimize efficiency for different output
power levels, and a shutdown mode with low leakage
current, increase handset talk and standby time. The
self-contained 4 mm x 4 mm x 1.1 mm surface mount
package incorporates matching networks optimized
for output power, efficiency, and linearity in a 50 Ω
system.
GND at slug (pad)
VCC
1
10 VCC
RFIN
2
9
GND
GND
3
8
RFOUT
7
GND
6
GND
VMODE 4
Bias Control
VREF 5
Figure 1: Block Diagram
12/2005
AWT6276R
GND
VCC
1
10 VCC
RFIN
2
9
GND
GND
3
8
RFOUT
VMODE
4
7
GND
VREF
5
6
GND
GND
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
2
PIN
NAME
DESCRIPTION
1
V CC
Supply Voltage
2
RFIN
RF Input
3
GND
Ground
4
VMODE
Mode Control Voltage
5
VREF
Reference Voltage
6
GND
Ground
7
GND
Ground
8
RFOUT
RF Output
9
GND
Ground
10
V CC
Supply Voltage
PRELIMINARY DATA SHEET - Rev 1.4
12/2005
AWT6276R
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN
MAX
UNIT
Supply Voltage (VCC)
0
+5
V
Mode Control Voltage (VMODE)
0
+3.5
V
Reference Voltage (VREF)
0
+3.5
V
RF Input Power (PIN)
-
+10
dB m
-40
+150
°C
Storage Temperature (TSTG)
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
Table 3: Operating Ranges
PARAMETER
MIN
TYP
MAX
UNIT
Operating Frequency (f)
1850
-
1910
MHz
Supply Voltage (VCC)
+3.2
-
+3.4
+1.5
+4.2
-
V
POUT < +29.5 dBm
POUT < 7 dBm
Reference Voltage (VREF)
+2.75
0
+2.85
-
+2.95
+0.5
V
PA "on"
PA "shut down"
Mode Control Voltage (VMODE)
+2.3
0
+2.85
-
+3.1
+0.5
V
Low Bias Mode
High Bias Mode
+29.5
+28.5
+27.5
+27.0
-
dB m
RF Output Power (POUT)
3GPP
HSDPA Case A
HSDPA Case B
HSDPA Case C
+29.0
+28.0
+27.0
+26.5
Case Temperature (TC)
-20
(1)
(1)
(1)
(1)
-
+110
(2)
COMMENTS
1/15 < βc/βd < 12/15
13/15 < βc/βd < 15/8
15/7 < βc/βd < 15/0
°C
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
Notes:
(1) For operation at VCC = +3.2 V, POUT is derated by 0.5 dB.
(2) For operation at 110 oC (TC), POUT is derated by 1.0 dB.
PRELIMINARY DATA SHEET - Rev 1.4
12/2005
3
AWT6276R
Table 4: Electrical Specifications
(TC = +25 °C, VCC = +3.4 V, VREF = +2.85 V, 50 Ω system)
PARAMETER
MIN
TYP
MAX
Gain
24.5
14.0
13.0
27.0
16.0
15.0
29.0
18.0
17.0
dB
-
-41
-40
-40
-38
-38
-38
dB c
-
-56
-52
-58
-48
-48
-48
dB c
40
18
13
45
21
16
-
%
Quiescent Current (Icq)
-
15
22
mA
VMODE = +2.85 V, VCC = 3.4 V
Reference Current
-
4
7
mA
through VREF pin
Mode Control Current
-
0.3
1
mA
through VMODE pin, VMODE = +2.85 V
Leakage Current
-
<1
5
µA
VCC = +4.2 V, VREF = 0 V,
VMODE = 0 V
Noise in Receive Band
-
-137
-135
Harmonics
2fo
3fo, 4fo
-
-45
-50
-35
-35
dB c
Input Impedance
-
-
2:1
VSWR
ACLR1 at 5 MHz offset
(1)
ACLR2 at 10 MHz offset
Power-Added Efficiency (1)
Spurious Output Level
(all spurious outputs)
Load mismatch stress with no
permanent degradation or failure
UNIT
POUT = +29.5 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.85 V
POUT = +7 dBm, VCC = 1.5 V,
VMODE = +2.85 V
POUT = +29.5 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.85 V
POUT = +7 dBm, VCC = 1.5 V,
VMODE = +2.85 V
POUT = +29.5 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.85 V
POUT = +7 dBm, VCC = 1.5 V,
VMODE = +2.85 V
POUT = +29.5 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.85 V
POUT = +7 dBm, VCC = 1.5 V,
VMODE = +2.85 V
dBm/Hz 1930 MHz to 1990 MHz
-
-
-70
dB c
POUT < +29.5 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating
conditions
10:1
-
-
VSWR
Applies over full operating range
Notes:
(1) ACLR and Efficiency measured at 1880 MHz.
4
COMMENTS
PRELIMINARY DATA SHEET - Rev 1.4
12/2005
AWT6276R
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to both the VREF and VMODE voltages.
Bias Modes
The power amplifier may be placed in either a Low
Bias mode or a High Bias mode by applying the
appropriate logic level (see Operating Ranges table)
to the VMODE voltage. The Bias Control table lists the
recommended modes of operation for various
applications.
Three operating modes are recommended to
optimize current consumption. High Bias operating
mode is for POUT levels > 16 dBm. At POUT <16dBm,
the PA should be “Mode Switched” to Low Bias Mode.
For POUT levels < ~7 dBm, the VCC can be switched
to 1.5 V (Low Bias Mode is also used for this POUT
range).
Table 5: Bias Control
APPLICATION
POUT
LE V E LS
BIAS
MODE
CDMA - low power
<+7 dBm
Low
+2.85 V +2.85 V
CDMA - med power
< +16 dBm
Low
+2.85 V +2.85 V +3.2 - 4.2 V
CDMA - high power
>+16 dBm
High
+2.85 V
0V
+3.2 - 4.2 V
-
Shutdown
0V
0V
+3.2 - 4.2 V
Shutdown
V R EF
VCC1
VMODE
V CC
> +1.5 V
VCC2
C1
0.01µF
RF IN
VMODE
VREF
C2
0.01µF
1
VCC
2
VCC
10
3
RFIN
GND
9
GND
RFOUT
8
4
VMODE
GND
7
5
VREF
GND
6
C3
0.01µF
C4
2.2µF ceramic
RF OUT
GND
at slug
Figure 3: Application Circuit Schematic
PRELIMINARY DATA SHEET - Rev 1.4
12/2005
5
AWT6276R
PACKAGE OUTLINE
Figure 4: M20 Package Outline - 10 Pin 4 mm x 4 mm x 1.1 mm Surface Mount Module
76R
76R
Figure 5: Branding Specification
6
PRELIMINARY DATA SHEET - Rev 1.4
12/2005
AWT6276R
COMPONENT PACKAGING
Figure 7: Tape & Reel Packaging
Table 6: Tape & Reel Dimensions
PACKAGE TYPE
TAPE WIDTH
POCKET PITCH
REEL CAPACITY
MAX REEL DIA
4 mm x 4 mm x 1.1 mm
12 mm
8 mm
2500
13"
PRELIMINARY DATA SHEET - Rev 1.4
12/2005
7
AWT6276R
ORDERING INFORMATION
ORDER
NUMBER
TEMPERATURE
RANGE
AWT6276RM20P8
-20 oC to +110 oC
PACKAGE
DESCRIPTION
COMPONENT PACKAGING
RoHS Compliant 10 Pin
4 mm x 4 mm x 1.1 mm Tape and Reel, 2500 pieces per Reel
Surface Mount Module
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without
notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are
subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are
assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges
customers to verify that the information they are using is current before placing orders.
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS
product in any such application without written consent is prohibited.
8
PRELIMINARY DATA SHEET - Rev 1.4
12/2005