Silicon Switching Diode Applications DO-35 Glass Package 1N4454, 1N4454-1 Used in general purpose applications, where performance and switching speed are important. DO-35 Glass Package L ea dDi a. 0 .0 18-0 .0 22" 0 .458-0 .558m m Features Six sigma quality Metallurgically bonded 1.0" Length BKC's Sigma Bond™ plating 25.4 mm m m (Min.) for problem free solderability LL-34/35 MELF SMD available Full approval to Mil-S-19500 /144 Available up to JANTXV-1 levels "S" level screening available to Source Control Drawings Dia. 0.06-0.09" 0.120-.200" 3.05-5.08- Maximum Ratings 1.53-2.28m m Symbol Value Unit PIV 75 (Min.) Volts o Peak Inverse Voltage @ 5µA & 0.1µA @ -55 C Average Rectified Current IAvg 200 mAmps Continuous Forward Current IFdc 300 mAmps Peak Surge Current (tpeak = 1 sec.) Ipeak 1.0 Amp Ptot 500 mWatts o Power Dissipation TL= 50 C, L = 3/8" from body Operating Temperature Range TOp Storage Temperature Range TSt Electrical Characteristics @ 25 oC* 200 o C -65 to +200 o C Symbol Limits Unit Forward Voltage @ IF= 10 mA VF 1.0(max) Volts Breakdown Voltage @ IR = 5 µA PIV 75 (min) Volts Reverse Leakage Current @ VR = 50 V IR 0.1 (max) µA Reverse Leakage Current @ VR = 50 V, T=150 o C IR 100 (max) µA Capacitance @ VR = 0 V, f = 1mHz CT 2.0 (max) pF Reverse Recovery Time (note 1)/(note 2) trr 2.0/4.0 (max) nSecs Forward Recovery Voltage (note 3) Vfr 3.0 (max) Volts Note 1: Per Method 4031-A with IF = IR = 10 mA, RL = 100 Ohms, C = 3 Pf. Note 2: Per Method 4031-A with IF = 10 mA, RL = 100 Ohms, Vr = 6 V, Recover to 1.0 mA. Note 3: Per Method 4026 with IF = 100 mA, RL = 50 Ohms,Peak Square wave ,100 nSec Pulse Width, tr<30 nSec,repetition Rate = 5 - 100 KHz. * Unless Otherwise Specified 6 Lake Street - Lawrence, MA 01841 Tel: 978-681-0392 - Fax: 978-681-9135 DO-35 DERATING (175 C Tj) DO-35 POWER DERATING CURVE Power Dissipated (MilliWatts) 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Temperature ( 3/8" from body) C 6 Lake Street - Lawrence, MA 01841 Tel: 978-681-0392 - Fax: 978-681-9135 180