BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Small reverse transfer capacitance. z Low noise figure. KTC3880S Pb Lead-free APPLICATIONS z High frequency Low noise amplifier application. z VHF band amplifier application. SOT-23 ORDERING INFORMATION Type No. Marking Package Code KTC3879 RR/RO/RY SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current 20 mA IE Emitter Current -20 mA PC Collector Power Dissipation 150 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ Document number: BL/SSSTC111 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor KTC3880S ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=100μA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 4 V Collector cut-off current ICBO VCB=18V,IE=0 0.5 μA Emitter cut-off current IEBO VEB=4V,IC=0 0.5 μA DC current gain hFE VCE=6V,IC=2mA 40 Transition frequency fT VCE=6V, IC= 1mA 300 Noise figure NF VCC=6V,IE=1mA, f=100KHz CLASSIFICATION OF B TYP MAX UNIT 240 550 MHz 2.5 5.0 dB hFE Rank R O Y Range 40-80 70-140 100-240 Marking AQR AQO AQY PACKAGE OUTLINE Plastic surface mounted package SOT-23 A SOT-23 E K B Dim Min Max A 2.85 2.95 B 1.25 1.35 C J D G H C 1.0Typical D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J K 0.1Typical 2.35 2.45 All Dimensions in mm Document number: BL/SSSTC111 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor KTC3880S SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping KTC3880S SOT-23 3000/Tape&Reel Document number: BL/SSSTC111 Rev.A www.galaxycn.com 3