BL Galaxy Electrical Production specification PNP General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary NPN type available MMBT3906 Pb Lead-free (MMBT3904). z Low Current (Max:-100mA). z Low Voltage(Max:-40v). APPLICATIONS z Ideal for medium power amplification and switching SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT3906 2A SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. VCBO collector-base voltage open emitter - -40 V VCEO collector-emitter voltage open base - -40 V VEBO emitter-base voltage open collector - -6 V IC collector current (DC) - -100 mA ICM peak collector current - -200 mA IBM peak base current - -100 mA Ptot total power dissipation - 250 mW Tstg storage temperature -65 +150 °C Tj junction temperature - 150 °C Tamb operating ambient temperature -65 +150 °C Note Tamb≤25°C MAX. UNIT Transistor mounted on an FR4 printed-circuit board. Document number: BL/SSSTC062 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification PNP General Purpose Transistor MMBT3906 ELECTRICAL CHARACTERISTICS @ Ta=25℃ SYMBOL PARAMETER CONDITIONS ICBO collector cut-off current IEBO unless otherwise specified MIN. MAX. IE = 0; VCB = -30 V - -50 nA emitter cut-off current IC = 0; VEB = 6 V - -50 nA hFE DC current gain VCE = -1V; IC= -0.1mA IC = -1mA IC = -10mA IC = -50mA IC = -100mA 60 80 100 60 30 300 - VCEsat collector-emitter saturation voltage IC = -10mA; IB = 1mA - -200 mV IC = -50mA; IB = -5mA - -300 mV base-emitter saturation voltage IC = -10mA; IB = -1mA - -850 mV IC = -50mA; IB = -5mA - -950 mV VBEsat B B B B UNIT Cc collector capacitance IE = Ie= 0; VCB = -5 V; f = 1 MHz - 4.5 pF Ce emitter capacitance IC = Ic= 0; VEB = -500 mV; f = 1 MHz - 10 pF fT transition frequency IC = -10mA; VCE = -20 V; f = 100MHz 250 - MHz NF noise figure IC = -100μA; VCE = -5V; RS = 1 kΩ;f = 10Hz to15.7 kHz - 4 dB Switching times (between 10% and 90% levels); ton Turn-on time - 65 ns td delay time - 35 ns tr rise time - 35 ns toff turn-off time - 300 ns ts storage time - 225 ns tr fall time - 75 ns Note ICon= -10mA; IBon = -1mA; IBoff= -1mA Pulse test: tp≤300 ms; d≤0.02. Document number: BL/SSSTC062 Rev.A www.galaxycn.com 2 BL Galaxy Electrical PNP General Purpose Transistor Production specification MMBT3906 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC062 Rev.A www.galaxycn.com 3 BL Galaxy Electrical Production specification PNP General Purpose Transistor MMBT3906 PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 A E K B Dim Min Max A 2.85 2.95 B 1.25 1.35 C J D G H C 1.0Typical D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J K 0.1Typical 2.35 2.45 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping MMBT3906 SOT-23 3000/Tape&Reel Document number: BL/SSSTC062 Rev.A www.galaxycn.com 4