TECHNICAL DATA NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/313 Devices Qualified Level JAN JANTX JANTXV 2N2432 2N2432A MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temp. Range Symbol 2N2432 2N2432A Unit VCEO VCBO VECO IC 30 30 15 45 45 18 100 300 600 -65 to +200 -65 to +175 Vdc Vdc Vdc mAdc mW mW 0 C 0 C Max. 0.25 Unit mW/ 0C PT Tstg TJ THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.0 mW/0C above TA > +250C 2) Derate linearly 4.0 mW/0C above TC > +250C Symbol RθJC TO- 18* (TO-206AA) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. V(BR)ECO 15 18 10 2N2432 2N2432A V(BR)CEO 30 45 2N2432 2N2432A ICES Max. Unit OFF CHARACTERISTICS Emitter-Collector Breakdown Voltage IE = 100 µAdc, IB = 0 IE = 10 mAdc, IB = 0 Collector-Emitter Breakdown Current IC = 10 mAdc Collector-Emitter Cutoff Current VCB = 25 Vdc VCB = 40 Vdc 2N2432 2N2432A Both 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc Vdc 10 10 ηAdc 120101 Page 1 of 2 2N2432, 2N2432A JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ICBO 100 10 100 10 µAdc ηAdc µAdc ηAdc IECS 2.0 ηAdc IEBO 2.0 ηAdc OFF CHARACTERISTICS (con’t) Collector-Emitter Cutoff Current VCB = 30 Vdc VCB = 25 Vdc VCB = 40 Vdc VCB = 45 Vdc Emitter-Collector Cutoff Current VEC = 15 Vdc, VBC = 0 Vdc Emitter-Base Cutoff Current VEB = 15 Vdc 2N2432 2N2432 2N2432A 2N2432A ON CHARACTERISTICS (1) Forward-Current Transfer Ratio IC = 10 µAdc, VCE = 5.0 Vdc IC = 1.0 mAdc, VCE = 5.0 Vdc Forward-Current Transfer Ratio (Inverted Connection) IC = 0.2 mAdc, VCE = 5.0 Vdc 2N2432 2N2432A Collector-Emitter Saturation Voltage IC = 10 Vdc, IB = 0.5 mAdc Emitter-Collector Offset Voltage IE = 0 mAdc, IB = 200 µAdc 2N2432 2N2432A IE = 0 mAdc, IB = 1.0 mAdc 2N2432 2N2432A hFE hFE(inv) 30 80 400 2.0 3.0 VCE(sat) 0.15 mVdc VEC(ofs) 0.5 0.4 0.1 0.7 mVdc DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 20 MHz Output Capacitance VCB = 0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance VEB = 0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz (1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 hfe 2.0 10 Cobo 12 pF Cibo 12 pF 120101 Page 2 of 2