PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2101M16 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 0.6 dB at 1 GHz • HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz • LOW PROFILE M16 PACKAGE: 6-pin lead-less minimold M16 DESCRIPTION NEC's NESG2101M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise ampliﬁers, medium power ampliﬁers, and oscillators ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS RF P1dB Output Power at 1 dB Compression Point VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT MIN dBm TYP Linear Gain, VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz, dB 15 Noise Figure at VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT dB 0.9 Ga Associated Gain at VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT dB NF Noise Figure at VCE = 2 V, IC = 7mA, f = 1 GHz, ZS = ZSOPT, ZL = ZLOPT dB 0.6 Ga Associated Gain at VCE = 2 V, IC = 7 mA, f = 1 GHz, ZS = ZSOPT, ZL = ZLOPT dB 19.0 11.0 Maximum Stable Gain1 at VCE = 3 V, IC = 50 mA, f = 2 GHz dB 14.5 17.0 |S21E| Insertion Power Gain at VCE = 3 V, IC = 50 mA, f = 2 GHz dB 11.5 13.5 GHz 14 Gain Bandwidth Product at VCE = 3 V, IC = 50 mA, f = 2 GHz Reverse Transfer Capacitance2 at VCB = 2 V, IE = 0 mA, f = 1 MHz pF ICBO Collector Cutoff Current at VCB = 5V, IE = 0 nA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA hFE DC Current Gain3 at VCE = 2 V, IC = 15 mA 1.2 13.0 MSG Cre MAX 21 GL fT DC UNITS NF 2 Notes: PARAMETERS AND CONDITIONS NESG2101M16 M16 17 0.4 0.5 100 100 130 190 260 1. MSG = S21 S12 2. Collector to base capacitance when the emitter pin is grounded. 3. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %. California Eastern Laboratories NESG2101M16 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 13.0 VCEO Collector to Emitter Voltage V 5.0 VEBO Emitter to Base Voltage V 1.5 Collector Current mA 100 PT2 IC Total Power Dissipation mW 190 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M16 6-PIN LEAD-LESS MINIMOLD Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy PCB. 1.0±0.05 3 0.15±0.05 6 Hz 5 4 2 0.4 0.8 0.4 1.2+0.07 -0.05 1 0.8+0.07 -0.05 ORDERING INFORMATION NESG2101M16-T3-A 10 K pcs reel SUPPLYING FORM Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape 0.125+0.1 -0.05 QUANTITY 0.5±0.05 PART NUMBER PIN CONNECTIONS 4. Base 1. Collector 5. Emitter 2. Emitter 6. Emitter 3. Emitter Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 11/13/2003 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. 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