NPN SILICON HIGH FREQUENCY TRANSISTOR UPA811T OUTLINE DIMENSIONS (Units in mm) FEATURES • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz • EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 1.25 ± 0.1 0.65 1 6 2 5 3 4 2.0 ± 0.2 DESCRIPTION NEC's UPA811T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device ideally suited for pager and other hand-held wireless applications. 0.9 ± 0.1 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 20 VCEO Collector to Emitter Voltage V 10 VEBO Emitter to Base Voltage V 1.5 IC Collector Current mA 35 PT Total Power Dissipation 1 Die 2 Die mW mW 110 200 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 0.2 (All Leads) 1.3 0.7 +0.10 0.15 - 0.05 0 ~ 0.1 PIN OUT 1. Collector Transistor 1 2. Base Transistor 2 3. Collector Transistor 2 4. Emitter Transistor 2 5. Emitter Transistor 1 6. Base Transistor 1 Note: Pin 3 is identified with a circle on the bottom of the package. Note: 1. Operation in excess of any one of these parameters may result in permanent damage. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS UPA811T S06 UNITS ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA hFE1 Forward Current Gain at VCE = 3 V, IC = 5 mA fT Cre2 |S21E|2 NF Gain Bandwidth at VCE = 3 V, IC = 5 mA Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz MIN 1.0 5.5 pF Insertion Power Gain at VCE = 3 V, IC = 5 mA, f = 2 GHz dB Noise Figure at VCE = 3 V, IC = 5 mA, f = 2 GHz dB MAX 1.0 80 GHz TYP 120 8.0 0.3 5.5 200 0.7 7.5 1.9 3.2 Notes: 1.Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA811T-T1, 3K per reel. California Eastern Laboratories UPA811T TYPICAL PERFORMANCE CURVES (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 160 µA Free Air 2 200 El Pe em rE en ts lem in en To t Collector Current, IC (mA) Total Power Dissipation, PT (mW) 25 al t 100 20 140 µA 15 100 µA 120 µA 80 µA 10 60 µA 40 µA 5 lB=20 µA 0 50 100 0 150 0.5 1.0 Ambient Temperature, TA (°C) Collector to Emitter Voltage, VCE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 20 200 VCE = 3 V DC Current Gain, hFE Collector Current, IC (mA) VCE = 3 V 10 100 50 20 10 0 0.5 1.0 0.5 5 10 Base to Emitter Voltage, VBE (V) Collector Current, IC (mA) FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 5.0 50 10 Gain Bandwidth Product, fT (GHz) f = 1 MHz Feddback Capacitance, CRE (pF) 1 2.0 1.0 0.5 0.2 VCE = 3 V f = 2 GHz 8 6 4 2 0 0.1 1 2 5 10 20 Collector to Base Voltage, VCB (V) 50 0.5 1 5 10 Collector Current, IC (mA) 50 UPA811T TYPICAL PERFORMANCE CURVES (TA = 25°C) INSERTION POWER GAIN vs. FREQUENCY INSERTION POWER GAIN vs. COLLECTOR CURRENT 25 VCE = 3 V f = 2 GHz Insertion Power Gain, IS21eI2 (dB) Insertion Power Gain, IS21eI2 (dB) 12 8 4 1 5 10 20 15 10 5 0 0.1 0 0.5 VCE = 3 V lc = 5 mA 50 0.2 0.5 1.0 2.0 5.0 Frequency, f (GHz) Collector Current, lC (mA) NOISE FIGURE vs. COLLECTOR CURRENT 5 Noise Figure, NF (dB) VCE = 3 V f = 2 GHz 4 3 2 1 0 0.5 1 5 10 50 Collector Current, lC (mA) ORDERING INFORMATION PART NUMBER UPA811T-T1-A QUANTITY 3000 PACKAGING Tape & Reel Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -1/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. 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