CEL UPA812T-T1-A

NPN SILICON HIGH
FREQUENCY TRANSISTOR
OUTLINE DIMENSIONS (Units in mm)
FEATURES
•
SMALL PACKAGE STYLE:
2 NE681 Die in a 2 mm x 1.25 mm package
•
LOW NOISE FIGURE:
NF = 1.4 dB TYP at 1 GHz
PACKAGE OUTLINE S06
(Top View)
2.1 ± 0.1
1.25 ± 0.1
•
HIGH GAIN:
|S21E|2 = 12 dB TYP at 1 GHz
•
HIGH GAIN BANDWIDTH: fT = 7 GHz
•
UPA812T
0.65
LOW CURRENT OPERATION
1
6
2
5
3
4
2.0 ± 0.2
DESCRIPTION
0.2 (All Leads)
1.3
NEC's UPA812T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high
fT, low voltage bias and small size make this device suited for
various hand-held wireless applications.
0.9 ± 0.1
0.7
ABSOLUTE MAXIMUM
+0.10
0.15 - 0.05
RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
20
VCEO
Collector to Emitter Voltage
V
10
VEBO
Emitter to Base Voltage
V
1.5
IC
Collector Current
mA
65
PT
Total Power Dissipation
1 Die
2 Die
mW
mW
110
200
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
0 ~ 0.1
PIN OUT
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
Note:
Pin 3 is identified with a circle on the bottom of the package.
Note: 1.Operation in excess of any one of these parameters may
result in permanent damage.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UPA812T
S06
UNITS
MIN
TYP
MAX
ICBO
Collector Cutoff Current at VCB = 10 V, IE = 0
µA
0.8
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
µA
0.8
hFE1
Forward Current Gain at VCE = 3 V, IC = 7 mA
fT
Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz
GHz
Cre2
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
pF
|S21E|2
Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz
dB
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz
dB
NF
hFE1/hFE2
hFE Ratio: hFE1 = Smaller Value of Q1, or Q2
hFE2 = Larger Value of Q1 or Q2
70
100
4.5
7.0
10
12
240
0.9
1.4
1.7
0.85
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA812T-T1, 3K per reel.
California Eastern Laboratories
UPA812T
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Free Air
2
200
El
Pe
em
rE
en
ts
lem
in
en
To
t
Collector Current, IC (mA)
Total Power Dissipation, PT (mW)
25
al
t
100
20
160 µA
140 µA
15
120 µA
100 µA
10
80 µA
60 µA
40 µA
5
lB=20 µA
0
50
100
0
150
0.5
1.0
Ambient Temperature, TA (°C)
Collector to Emitter Voltage, VCE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
50
VCE = 3 V
40
DC Current Gain, hFE
Collector Current, IC (mA)
VCE = 3 V
30
20
10
100
50
20
10
0
0.5
0.5
1.0
5
10
Collector Current, IC (mA)
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
5.0
50
10
Gain Bandwidth Product, fT (GHz)
f = 1 MHz
Feddback Capacitance, CRE (pF)
1
Base to Emitter Voltage, VBE (V)
2.0
1.0
0.5
0.2
0.1
1
2
5
10
20
Collector to Base Voltage, VCB (V)
50
VCE = 3 V
f = 1 GHz
8
6
4
2
0
0.5
1
5
10
Collector Current, IC (mA)
50
UPA812T
TYPICAL PERFORMANCE CURVES (TA = 25°C)
INSERTION POWER GAIN vs.
FREQUENCY
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
25
VCE = 3 V
f = 1 GHz
Insertion Power Gain, IS21eI2 (dB)
Insertion Power Gain, IS21eI2 (dB)
15
10
5
0
0.5
1
5
10
VCE = 3 V
lc = 7 mA
20
15
10
5
0
0.1
50
0.2
0.5
1.0
2.0
5.0
Frequency, f (GHz)
Collector Current, lC (mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
5
VCE = 3 V
f = 1 GHz
Noise Figure, NF (dB)
4
3
2
1
0
0.5
1.0
5.0
10
50
Collector Current, lC (mA)
ORDERING INFORMATION
PART NUMBER
UPA812T-T1-A
QUANTITY
3000
PACKAGING
Tape & Reel
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
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RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
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PRINTED IN USA ON RECYCLED PAPER -1/99
DATA SUBJECT TO CHANGE WITHOUT NOTICE
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
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CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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