DEC DB801

DIOTEC ELECTRONICS CORP.
Data Sheet No. BRDB-800-1C
ABDB-800-1C
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
8 AMP SILICON BRIDGE RECTIFIERS
MECHANICAL SPECIFICATION
FEATURES
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)
ACTUAL SIZE
DT
DB804
SERIES DB800-DB810 and ADB804-ADB808
BUILT-IN STRESS RELIEF MECHANISM FOR
SUPERIOR RELIABILITY AND PERFORMANCE
BH
y)z
SURGE OVERLOAD RATING TO 400 AMPS PEAK
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UL RECOGNIZED - FILE #E124962
LL
_
+
RoHS COMPLIANT
LD
D1
MECHANICAL DATA
Case: Molded Epoxy (UL Flammability Rating 94V-0)
SYM
Terminals: Round silver plated copper pins
MILLIMETERS
+
INCHES
MAX
BL
18.5
MAX
19.6
MIN
Soldering: Per MIL-STD 202 Method 208 guaranteed
0.73
0.77
Polarity: Marked on side of case; positive lead at beveled corner
BH
6.4
7.6
0.25
0.3
Mounting Position: Any. Through hole provided for #6 screw
D1
LL
12.2
13.2
0.48
0.52
22.2
n/a
LD
1.2
1.3
0.875
0.048
n/a
0.052
MIN
Weight: 0.18 Ounces (5.4 Grams)
BL
_
BL
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
! " # $ % & " " ' " ( ) $ *
PARAMETER (TEST CONDITIONS)
SYMBOL
ÞYßáàQâ;ãäßáå@åBæèç
é;êBéWëéWìäíïîYð
RATINGS
ñ
ò
ôYò
òáø@øBùèú
ñä
û;ó üBûWýñQ
ûWõ÷þäö ÿ
UNITS
UWVYX[ZW\Y]_^W`YacbYdfeYgfhYifjYkmlYnpoYqsrYt
xyz|{0}~€0ƒ‚„„†…‡Bˆ|‰Š‹Œ0Žc0‘’”“•“€–B—˜
Series Number
Maximum DC Blocking Voltage
V [email protected]
Working Peak Reverse Voltage
V GHJI
Maximum Peak Recurrent Reverse Voltage
V [email protected]@L
V M6N [email protected]
RMS Reverse Voltage
Power Dissipation in V
D1
Ù Ú;ÛBÜ
Ý
P [email protected]
Region for 100 S Square Wave
Continuous Power Dissipation in V
CDFE
@ T =80 C (Heat Sink Temp)
= >@?BA
Region
Pw
Thermal Energy (Rating for Fusing)
º0»¼¾½0¿À¡ÁÂäÄÅÇÆÈÊÉÌË0;ÎÏаÑ0ÒÓ
²0³³
´µ ¶
·¸ ¹
I I2
T- , T.0/1
3 4465 798;:4<
It
Peak Forward Surge Current. Single 60Hz Half-Sine Wave
+
,
Superimposed on Rated Load (JEDEC Method). T = 150 C
@ T = 50 C (Note 1)
Average Forward Rectified Current
@T = 50 C (Note 2)
Junction Operating and Storage Temperature Range
Minimum Avalanche Voltage
V; <=?>@BA C
Maximum Avalanche Voltage
VD EF?GH-IKJ
Maximum Forward Voltage (Per Diode) at 4 Amps DC
Maximum Reverse Current at Rated V LM
N
O
@ T = 25 C
P
Q
@T = 125 C
Minimum Insulation Breakdown Voltage (Circuit to Case)
Typical Thermal Resistance
›œœžŸŸ¡ ¢¢¤£¥§¦¨0¨¡©ªª¡«0¬¬”­®®°¯0±±
Junction to Ambient (Note 2)
Junction to Case (Note 1)
V "#
I RS
V T UV
R
R!
')((+*-,/. (10
2)33+4-5/6 317
W?X YZ\[ ]_^?`X_W?X YWa
b
cd
fggg
i_j
k
Ö0×Ø
™šš0š
VOLTS
ÔÕ0Õ
WATTS
AMPS
SEC
AMPS
°C
$% &
89 :
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} ˜€? ‚ ƒ_„…†ˆ‡‰Š‹ …ƒˆ‡Šž¡¢£€/‡_œ ƒ §B¨ © ªˆ«¬ ­®”¯°¬K± ²“³´ž´›¯°¬ µ_¶·¸¸¹º¸»K¼_¯»½_¼ž¾º ¨ ¼¿_¹À ¹»¼žÀ ¹½¿_© ªˆ·Á ’ ‘K¤¥¦} Ž ¥†ˆ†ž
± µÃ/·À ©¾º ¨ ¼¿_¹·½žª¹»K©_¯_¨ ½ÄKÅƯ_¨ ½¿ˆ¯¨ À ¨ ¶·½© ª_¹º ´ˆ»À¶·´ˆ¸_·Æ½¼Ç¾¹K© §-¹K¹½ž¾_º ¨ ¼_¿¹B»½_¼ž´ˆ·Æ½© ¨ ½¿ˆ¯Æº Á »¶¹ÅÁ ·º´»KÈ_¨ ´ˆÆ´Éª_¹K»K©© º »½¯Á ¹º
± Ê_µËª¹K¯¹¾º ¨ ¼¿_¹K¯¹KÈ_ª_¨ ¾¨ ©© ª¹»KÌ»À »½_¶ª_¹¶ª_»º »¶K© ¹º ¨ ¯K© ¨ ¶»©¾º ¹»Ä¼·§B½¬Í Áηƺ»¸¸_À ¨ ¶»K© ¨ ·½ˆº ¹K°Æ_¨ º ¹K¯»B¯_¸¹¶¨ Á ¨ ¶¾º ¹»Ä¼·_§-½Ì·À © »¿¹º »½¿¹Å¸À ¹»¯¹¶·½© »¶K©Æ¯_¬
VOLTS
e
A
VOLTS
h
C/W
l m n oKn p q r
E31
DIOTEC ELECTRONICS CORP.
Data Sheet No. BRDB-800-2C
ABDB-800-2C
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
8 AMP SILICON BRIDGE RECTIFIERS
RATING & CHARACTERISTIC CURVES FOR SERIES DB800 - DB810 and SERIES ADB804 - ADB808
400
12
350
NOTE 1
Peak Forward Surge Current
(Amperes)
Average Forward Current, Io
(Amperes)
60Hz Resistive or Inductive Loads
10
8
Case
6
Ambient
4
300
250
200
150
2
NOTE 2
100
0
0
50
á
100
150
50
10
1
100
Temperature, C
Number of Cycles at 60 Hz
FIGURE 1. FORWARD CURRENT DERATING CURVE
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
Instantaneous Reverse Current, I
(Microamperes)
Instantaneous Forward Current
Amperes
äåå
âã
1.0
NOTE 3
0.1
T = 100 C
ÿ üý þ
ùú ù_û
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
T = 25 C
é
êë
Instantaneous Forward Voltage (Volts)
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
ìí
îï
ðñóòôôöõ“÷ø
æ“çè
Percent of Rated Peak Reverse Voltage
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
ØÙÙ
Capacitance, pF
NOTE 4
NOTES
(1) Case Temperature, T With Bridge Mounted on
4.9" x 4.3" x 0.11" Thick (12.4cm x 10.8cm x 0.3cm)
Aluminum Plate
ÑÒÒ
Ambient Temperature, T With Bridge Mounted on
PC Board With 0.5" Sq. (12mm Sq.) Copper Pads
And Bridge Lead Length of 0.375" (9.5mm)
ÏÐ
Ó
֓×
ÔÕÕ
Reverse Voltage, (Volts)
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
(2) T = 150 C
(3) T = 25 C; Pulse Width = 300mSec; 1% Duty Cycle
(4) T = 25 C; f = 1 MHz; Vsig = 50mVp-p
E32
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