Looking for: KBU8A, KBU8B, KBU8D, KBU8G KBU8J, KBU8K, KBU8M? or GBU8A, GBU8B, GBU8D, GB8G, GBU8J,GBU8K, GBU8M? DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 8 AMP SILICON BRIDGE RECTIFIERS MECHANICAL SPECIFICATION FEATURES VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical < 2%, Max. < 10% of Die Area) C A C1 C2 BUILT-IN STRESS RELIEF MECHANISM FOR SUPERIOR RELIABILITY AND PERFORMANCE D D3 D2 _ SURGE OVERLOAD RATING TO 400 AMPS PEAK + D D1 A1 THRU-HOLE FOR EASY HEAT SINK MOUNTING L UL RECOGNIZED - FILE #E124962 RoHS COMPLIANT L1 B1 B MECHANICAL DATA MILLIMETERS INCHES SYM Case: Molded Epoxy (UL Flammability Rating 94V-0) Terminals: Round silver plated pins MIN MAX A 6.6 7.1 A1 4.7 5.2 0.185 0.205 1.22 1.32 0.048 0.052 B B1 Soldering: Per MIL-STD 202 Method 208 guaranteed C Polarity: Marked on case 0.280 5.59 0.180 0.220 23.24 0.895 0.915 C1 4.2 4.7 0.165 0.185 3.6 4.1 0.140 0.160 D Weight: 0.3 Ounces (8 Grams) MAX 0.260 C2 D1 Mounting Position: Any. Max. mounting torque = 5 in lb 4.57 22.7 MIN n/a 19.3 n/a 0.760 10.3 11.3 0.405 0.455 D2 1.7 2.2 0.065 0.085 D3 16.5 17.8 0.660 0.700 L 25.4 n/a 1.0 6.8 0.180 L1 4.57 _ + SERIES SBU8A - SBU8M n/a 0.260 MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, 60Hz, resistive or inductive load. For capacitive loads, derate current by 20%. PARAMETER (TEST CONDITIONS) RATINGS SYMBOL Series Number SBU 8A SBU 8B SBU 8D UNITS SBU 8G SBU 8J SBU 8K SBU 8M Maximum DC Blocking Voltage VRM 50 100 200 400 600 800 1000 Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 VRRM 50 100 200 400 600 800 1000 Maximum Peak Recurrent Reverse Voltage Average Forward Rectified Current o TC = 100 C (Notes 1, 3) Peak Forward Surge Current. Single 60Hz Half-Sine Wave O Superimposed on Rated Load (JEDEC Method). TJ = 150 C Maximum Forward Voltage (Per Diode) at 8 Amps DC o @ TA = 25 C Maximum Average DC Reverse Current o At Rated DC Blocking Voltage @ TA = 125 C Junction to Ambient (Note 2) Typical Thermal Resistance Junction to Case (Note 1) Minimum Insulation Breakdown Voltage (Circuit to Case) Operating and Storage Temperature Range IO 8 IFSM 400 VFM 0.95 (Typ. 0.90) VOLTS AMPS VOLTS RqJA RqJC 1 50 16 3 °C/W VISO 2500 VOLTS TJ ,TSTG -55 to +150 IRM NOTES: (1) Bridge mounted on 3.2" sq. x 0.12" thick (8.2cm sq. x 0.3cm) aluminum plate (2) Bridge mounted on PC Board with 0.5" sq. (12mm sq.) copper pads and bridge lead length of 0.375" (9.5mm) (3) Bolt bridge on heat sink with #6 screw, using silicon thermal compound between bridge and mounting surface for maximum heat transfer. mA °C Data Sheet No. BSBU-800-1D E29 DIOTEC ELECTRONICS CORP. Data Sheet No. BSBU-800-2C 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 8 AMP SILICON BRIDGE RECTIFIERS RATING & CHARACTERISTIC CURVES FOR SERIES SBU8A - SBU8M 400 NOTE 1 350 300 60Hz 250 200 150 100 o Temperature, C 50 FIGURE 1. FORWARD CURRENT DERATING CURVE 10 1 100 Number of Cycles at 60 Hz FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT 50 10 10 1.0 1.0 0.1 0.1 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0.01 FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE CHARACTERISTICS 400 NOTE 4 100 NOTES (1) Case Temperature, TC, With Bridge Mounted on 3.2" Sq. x 0.12" Thick (8.2cm Sq. x 0.3cm) Aluminum Plate o (2) TJ = 150 C 10 1 10 100 Reverse Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE E30 o (3) TJ = 25 C; Pulse Width = 300mSec; 1% Duty Cycle o (4) TJ = 25 C; f = 1 MHz; Vsig = 50mVp-p 3.1 08sbu