EDI RVF30

RVF
FAST RECOVERY - HIGH VOLTAGE
HIGH CURRENT SILICON RECTIFIERS
MATCHED SILICON RECTIFIER ELEMENTS
DIFFUSED SILICON JUNCTIONS
PRV 5,000 TO 40,000 VOLTS
AVALANCHE CHARACTERISTICS
LOW LEAKAGE
EDI Type No.
Peak
Reverse Voltage
PRV (V olts)
Average Rectified
Current
@55 o [email protected] o C
Amps
Max. Fwd Voltage
Length L
Fig.3
Inches
MM
@25 oC
I F =0.5 ADC
(Volts)
RVF5
5,000
0.50
0.33
9
1.25
31.75
RVF8
8,000
0.33
12
1.75
44.45
0.33
15
2.00
50.80
RVF10
10,000
0.50
0.50
RVF12.5
12,500
0.50
0.33
20
2.50
63.50
RVF15
15,000
0.50
0.33
23
3.00
76.20
RVF20
20,000
0.40
0.27
30
4.00
101.60
RVF25
25,000
0.40
0.27
38
4.50
114.30
RVF30
30,000
0.40
0.27
45
5.50
139.70
RVF40
40,000
0.40
0.27
60
7.00
177.80
ELECTRICAL CHARACTERISTICS(at TA =25 C Unless Otherwise Specified)
o
0.1 A
o
15
Max. DC Reverse Current @ PRV and 25 C, IR
Max. DC Reverse Current @ PRV and 100 C, IR
A
Ambient Operating Temperature Range,TA
-55 oC to +150 oC
Storage Temperature Range, TSTG
-55 oC to +150 oC
Max.One-Half Cycle Surge Current, I FM (Surge )@ 60Hz
50 Amps
Forward Voltage Repetitive Peak,I FRM
2 Amps
Max. Reverse Recovery Time , Trr (Fig.4)
150 nanoseconds
EDI reserves the right to change these specifications at any time without notice.
RVF
FIG.2
FIG.1
NON-REPETITIVE SURGE CURRENT RATINGS
OUTPUT CURRENT vs AMBIENT TEMPERATURE
0.1SEC
1.0SEC
100
500
RVF 5-15
400
% MAXIMUM SURGE
AVG. RECTIFIED D.C. CURRENT
MILLAMPERES
600
300
200
RVF 20-40
100
75
50
25
0
0
25
50
75
100
125
150
175
1
3
2
5 6 7 8 9 10
4
20
30
40 50 60
O
AMBIENT TEMP( C )
CYCLES(60 Hz)
FIG.3
PACKAGE STYLE
A
E
_
L +
B
C
LTR
INCHES
MILLIMETERS
A
B
.051 DIA.
+
_ .03
2.0 MIN.
0.31 MAX.
1.30 DIA.
+
_ .76
50.8 MIN.
7.9 MAX.
19.30 MAX.
C
D
E
D
0.76 MAX.
It is recommended that a proper heat sink be used on the terminals of this device between the body and the soldering point to
prevent damage form excess heat.
FIG.4
TEST CIRCUIT
TYPICAL REVERSE RECOVERY WAVEFORM
R1
50 OHM
+
T RR
ZERO
REFERENCE
0.5A
D.U.T.
1.0A
0.25A
PULSE
GENERATOR
R2
1 OHM
SCOPE
R1, R2 NON-INDUCTIVE RESISTORS
PULSE GENERATOR - HEWLETT
PACKARD 214A OR EQUIV.
IKC REP.RATE, 10 SEC. PULSE WIDTH
ADJUST PULSE AMPLITUDE FOR PEAK IR
Prior to the manufacture of these assemblies, the individual silicon junction is measured for
maximum recovery time in the test circuit shown.
ELECTRONIC DEVICES, INC. DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951.
21 GRAY OAKS AVENUE
* YONKERS. NEW YORK 10710 914-965-4400
Ee-mail:[email protected] * Wwebsite: http://www.edidiodes.com
* FAX 914-965-5531
* 1-800-678-0828