InGaAs-PIN/Preamp Receiver FRM3Z231KT/LT FEATURES • • • • Data rate up to 2.5Gb/s -23dBm typ. sensitivity 30µm active area PIN chip with GaAs pre-amplifier Small co-axial package with multi-mode fiber KT APPLICATIONS • High bit rate short haul optical transmission systems operating at 2.5Gb/s DESCRIPTION These PIN preamplifiers use an InGaAs PIN chip with GaAs IC preamplifier. The KT package is designed for a horizontal PC board mount. The LT package is secured by a vertical flange. Each package is connected with multi-mode fiber by Nd: YAG welding. The detector preamplifier is DC coupled and has a low electrical output when the PIN is illuminated. These devices are in compliance with ITU-T Recommendations and meet Bellcore Requirements. Edition 1.0 March 1999 1 LT InGaAs-PIN/Preamp Receiver FRM3Z231KT/LT ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) Parameter Symbol Ratings Unit Storage Temperature Tstg -40 to +85 °C Operating Temperature Top -40 to +85 °C Supply Voltage Vss -7 to 0 V PIN Reverse Voltage VR 0 to 20 V PIN Reverse Current IR (Note 1) 2.0 mA OPTICAL & ELECTRICAL CHARACTERISTICS (Ta=-40° to +85°C, λ=1,310/1,550nm, Vss=-5.2V, VR=5V, unless otherwise specified) Parameter PIN Responsivity AC Transimpedance Bandwidth Equivalent Input Noise Current Density Sensitivity Maximum Overload Symbol Test Conditions R15 R13 1,550nm, M=1 1,310nm, M=1 AC-coupled, f=100MHz, RL=50Ω, Pin <-20dBm Zt Min. Limits Typ. 0.80 0.80 Unit 0.85 0.85 Max. - A/W A/W 400 600 - Ω GHz BW AC-Coupled, RL=50Ω, Pin <-27dBm, -3dBm from 1MHz 1.8 2.0 - in AC-Coupled, RL=50Ω, Average within BW - 6.5 8 - -23 -22 dBm Pr Ta=25°C, 2.488Gb/s NRZ, PRBS=223-1, B.E.R.=10-10 Ta=-40 to +85°C - -22 -21 dBm Ta=-40 to +85°C 2.488Gb/s NRZ, PRBS=223-1, B.E.R.=10-10 0 - - dBm Ta=-40 to +85°C (Note 2) -3 - - dBm Po pA/ Hz Reverse Voltage VR - 5 - 20 V Power Supply Current Iss - - - 40 mA Power Supply Voltage Vss - -5.46 -5.2 -4.94 V Note: (1) CW condition (2) Maximum Input Optical Power, Pmax is defined as the optical power when the variation of F.W.H.M. of the output waveform is less than 10% compared with that of the low input optical power level. (3) Optical characteristics are specified on the condition that single mode fiber is used as the optical source for testing. (4) No data is available for either device. Edition 1.0 March 1999 2 InGaAs-PIN/Preamp Receiver FRM3Z231KT/LT Fig. 1 Output Characteristics Fig. 2 Relative Frequency Response Tc = 25°C Vss=-5.2V 0.6 AC-Coupled RL=50Ω 0.5 100Mb/s Duty 50% Mark density 50% 0.4 0.3 Relative Response (3dB/div) Output Voltage Peak, Vpp(mV) 0.7 Zt ~ 600Ω 0.2 Ta = 25°C Vss=-5.2V AC-Coupled RL=50Ω Pin=-30dBm λ = 1,310/1,550nm 1 10 100 1000 0.1 Frequency, f (MHz) 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Average Photocurrent, Ip.ave (mA) Fig.4 Eye Diagram with a 1,310nm, 2.5Gb/s NRZ, 223-1 PRBS incident signal Relative Input Noise Current Density, in (pA/sqr. Hz) Fig.3 Equivalent Input Noise Current Density Input optical wave form with Bessel filter 10 5 Equivalent output wave form at Pin=-22dBm, Tc=25°C, M=optimum Tc = 25°C Vss=-5.2V AC-Coupled RL=50Ω 0 0 2.0 1.0 Frequency, f (GHz) 100ps/div Edition 1.0 March 1999 3 InGaAs-PIN/Preamp Receiver FRM3Z231KT/LT Fig.5 Bit Error Rate λ=1,310/1,550nm 2.5Gb/s, NRZ Vss=-5.2V VR=5V Bit Error Rate 10-4 10-6 Ta=+25°C +85°C 10-8 -40°C 10-10 10-12 -30 -20 -25 Received Optical Power (dBm) “KT” PACKAGE UNIT: mm GND 2-C1.5 2.0±0.1 VR 2.5±0.1 VSS Ø0.9±0.1 Ø7.2 MAX Ø6.0 MAX 4-Ø0.45±0.05 P.C.D. 4.0±0.2 P.C.D. 2.0±0.2 8.4±0.2 14.0±0.15 17.0±0.2 VR OUT GND 4.4 MAX 32.0 MAX 10.0 MIN 4.2±0.2 1000 MIN VSS 8.4±0.2 OUT UNIT: mm “LT” PACKAGE GND VR VR 7.6 MAX Ø0.9 Ø6.0 MAX 1.0±0.1 VSS OUT Ø7.2 MAX 4-Ø0.45±0.05 2.5±0.1 P.C.D. 2.0±0.2 OUT P.C.D. 4.0±0.2 14.0±0.15 17.0±0.2 VSS GND 10.0 MIN 32.0 MAX 1000 MIN Edition 1.0 March 1999 4 InGaAs-PIN/Preamp Receiver FRM3Z231KT/LT For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. Americas & R.O.W. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put this product into the mouth. 55 Schanck Road, Suite A-2 Freehold, NJ 07728-2964, U.S.A. Phone: (732) 303-0282 FAX: (732) 431-3393 • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. www.fcsi.fujitsu.com FUJITSU MIKROELECTRONIK GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ, UK Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 FUJITSU QUANTUM DEVICES, LTD. Asia & Japan 2-7-1, Nishi Shinjuku Shinjuku-ku, Tokyo 163-0721 Japan Phone: 3-5322-3356 FAX: 3-5322-3398 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0199M200 Edition 1.0 March 1999 5