FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11448-2E TM 64 Mbit Mobile FCRAM 1.8 V, Burst Mode & Page Mode MB82DBS04164E-70L FEATURES • • • Pseudo SRAM with Single Data Rate (SDR) Burst Interface Complies with Common Specifications for Mobile RAM (COSMORAM) Revision 3 8 Words Page Read Access Capability _____ • • • • • ______ Byte Control with LB, UB pin Low Power Consumption Various Power Down Mode Sleep 8 Mbit Partial 16 Mbit Partial 32 Mbit Partial Chip / Wafer Business 71pin Plastic FBGA Package for Engineering Sample only MAIN SPECIFICATIONS Part Number MB82DBS04164E-70L Organization 4 M WORD × 16 BIT Supply Voltage 1.7 V to 1.95 V Burst Frequency (Max.) RL＝7 CLK Access Time (Max.) RL＝6, 7 104 MHz 7 ns Page Address Access Time (Max.) 20 ns Address Access Time (Max.) 70 ns Active Current (Max.) 40 mA Standby Current (Max.) 200 μA Power Down Current (Max.) Sleep 10 μA Note: FCRAM is a trademark of Fujitsu Limited, Japan. September, 2007 1/1 Copyright©2007 FUJITSU LIMITED All rights reserved