FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11453-1E TM 64 Mbit SDR I/F Consumer FCRAM Consumer Embedded Application Specific Memory MB81ES641645A-07 FEATURES • • • • • • • • • • SDRAM Interface 1 M word × 16 bit × 4 bank organization 1.8 V Low Power Supply (VDD = VDDQ) 4K Refresh Cycle every 64ms Auto- and Self-Refresh Burst Read / Burst Write and Burst Read / Single Write Operation Capability Programmable Partial Array Self Refresh (PASR) Programmable Driver Strength (DS) Deep Power Down Mode CKE Power Down Mode MAIN SPECIFICATIONS Part Number MB81ES641645A-07 Organization 1 M Word × 16 bit × 4 bank Supply Voltage (VDD = VDDQ) Clock Frequency (Max.) Clock Period (tCK) (Min.) Access Time from Clock (tAC) (Max.) 1.7 V to 1.95 V CL＝2 81 MHz CL＝3 135 MHz CL＝2 12.3 ns CL＝3 7.4 ns CL＝2 9 ns CL＝3 6.5 ns Operating Current (Max.) T.B.D. Standby Current (Power Down Mode) (Max.) T.B.D. Self Refresh Current (Max.) T.B.D. Note: FCRAM is a trademark of Fujitsu Limited, Japan. July, 2007 1/1 Copyright©2007 FUJITSU LIMITED All rights reserved