GTM GC2301

Pb Free Plating Product
ISSUED DATE :2005/05/24
REVISED DATE :
GC2301
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-20V
130m
-2.6A
Description
The GC2301 provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
The GC2301 is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Fast Switching
Package Dimensions
D
TO-92
E
A
S1
b1
S E A T IN G
PLANE
L
REF.
e1
e
b
A
S1
b
b1
C
C
Millimeter
Min.
Max.
4.45
4.7
1.02
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
1.150
1.390
2.42
2.66
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Unit
V
V
A
A
A
W
W/
Tj, Tstg
Ratings
-20
±12
-2.6
-2.1
-10
1.38
0.01
-55 ~ +150
Symbol
Rthj-a
Value
90
Unit
/W
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
GC2301
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ISSUED DATE :2005/05/24
REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
-20
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
-0.1
-
Gate Threshold Voltage
VGS(th)
-0.5
-
-
V
VDS=VGS, ID=-250uA
gfs
-
4.4
-
S
VDS=-5V, ID=-2.8A
IGSS
-
-
±100
nA
VGS= ±12V
-
-
-1
uA
VDS=-20V, VGS=0
-
-
-10
uA
VDS=-16V, VGS=0
-
-
130
-
-
190
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance2
IDSS
RDS(ON)
V/
m
Test Conditions
VGS=0, ID=-250uA
Reference to 25 , ID=-1mA
VGS=-5.0V, ID=-2.8A
VGS=-2.8V, ID=-2.0A
Total Gate Charge2
Qg
-
5.2
10
Gate-Source Charge
Qgs
-
1.36
-
Gate-Drain (“Miller”) Change
Qgd
-
0.6
-
Td(on)
-
5.2
-
Tr
-
9.7
-
Td(off)
-
19
-
Tf
-
29
-
Input Capacitance
Ciss
-
295
-
Output Capacitance
Coss
-
170
-
Reverse Transfer Capacitance
Crss
-
65
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
-1.2
V
IS=-1.6A, VGS=0V, Tj=25
IS
-
-
-1
A
VD=VG=0V, VS=-1.2V
ISM
-
-
-10
A
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
nC
ID=-2.8A
VDS=-6V
VGS=-5V
ns
VDS=-15V
ID=-1A
VGS=-10V
RG=6
RD=15
pF
VGS=0V
VDS=-6V
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
1
Test Conditions
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
GC2301
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ISSUED DATE :2005/05/24
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
GC2301
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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ISSUED DATE :2005/05/24
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GC2301
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