GTM GI01N60

Pb Free Plating Product
ISSUED DATE :2004/06/01
REVISED DATE :2005/01/28B
GI01N60
BVDSS
RDS(ON)
ID
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
600V
8
1.6A
Description
The GI01N60 provide the designer with the best combination of fast switching.
The through-hole version (TO-251) is available for low-profile applications and suited for AC/DC converters.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0.45
0.60
0.90
1.50
5.40
5.80
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current, VGS@10V
ID @TC=25
1.6
A
Continuous Drain Current, VGS@10V
ID @TC=100
1
A
6
A
39
W
Pulsed Drain Current
1
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy
0.31
2
W/
EAS
13
mJ
Avalanche Current
IAR
1.6
A
Repetitive Avalanche Energy
EAR
0.5
mJ
Tj, Tstg
-55 ~ +150
Symbol
Value
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Unit
Thermal Resistance Junction-case
Max.
Rthj-c
3.2
/W
Thermal Resistance Junction-ambient
Max.
Rthj-a
110
/W
GI01N60
Page: 1/5
ISSUED DATE :2004/06/01
REVISED DATE :2005/01/28B
Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
600
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
0.6
-
Gate Threshold Voltage
VGS(th)
2.0
-
4.0
V
VDS=VGS, ID=250uA
gfs
-
0.8
-
S
VDS=50V, ID=0.8A
IGSS
-
-
±100
nA
VGS= ±20V
-
-
100
uA
VDS=600V, VGS=0
-
-
500
uA
VDS=480V, VGS=0
RDS(ON)
-
7.2
8.0
Total Gate Charge
Qg
-
7.7
-
Gate-Source Charge
Qgs
-
1.5
-
Gate-Drain (“Miller”) Change
Qgd
-
2.6
-
Td(on)
-
8
-
Tr
-
5
-
Td(off)
-
14
-
Tf
-
7
-
Ciss
-
286
-
Output Capacitance
Coss
-
25
-
Reverse Transfer Capacitance
Crss
-
5
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.5
V
IS=1.6A, VGS=0V, Tj=25
IS
-
-
1.6
A
VD=VG=0V, VS=1.5V
ISM
-
-
6
A
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
Static Drain-Source On-Resistance
3
3
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
IDSS
V/
Test Conditions
VGS=0, ID=250uA
Reference to 25 , ID=1mA
VGS=10V, ID=0.8A
nC
ID=1.6A
VDS=480V
VGS=10V
ns
VDD=300V
ID=1.6A
VGS=10V
RG=10
RD=187.5
pF
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
3
Forward On Voltage
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
1
Test Conditions
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 , VDD=50V, L=10mH, RG=25 , IAS=1.6A.
3. Pulse width 300us, duty cycle 2%.
GI01N60
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ISSUED DATE :2004/06/01
REVISED DATE :2005/01/28B
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
Fig 6. Type Power Dissipation
GI01N60
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ISSUED DATE :2004/06/01
REVISED DATE :2005/01/28B
Fig 7. Maximum Safe Operating Area
Fig 9. Gate Charge Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
GI01N60
Fig 8. Effective Transient Thermal Impedance
Fig 10. Typical Capacitance Characteristics
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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ISSUED DATE :2004/06/01
REVISED DATE :2005/01/28B
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GI01N60
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