GTM GI3055S

Pb Free Plating Product
ISSUED DATE :2006/05/19
REVISED DATE :2006/11/09B
GI3055S
BVDSS
RDS(ON)
ID
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
20V
25m
18A
Description
The GI3055S provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The through-hole version (TO-251) is available for low-profile applications and suited for low voltage
applications such as DC/DC converters.
Features
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0.45
0.60
0.90
1.50
5.40
5.80
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VGS
20
V
Gate-Source Voltage
VGS
±8
V
Continuous Drain Current, VGS@10V
ID @TC=25
18
A
Continuous Drain Current, VGS@10V
ID @TC=100
10
A
30
A
28
W
Pulsed Drain Current
1
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
0.22
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Symbol
Value
W/
Thermal Data
Parameter
Unit
Thermal Resistance Junction-case
Max.
Rthj-c
4.5
/W
Thermal Resistance Junction-ambient
Max.
Rthj-a
110
/W
GI3055S
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ISSUED DATE :2006/05/19
REVISED DATE :2006/11/09B
Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
0.037
-
Gate Threshold Voltage
VGS(th)
0.5
-
1.2
V
VDS=VGS, ID=250uA
gfs
-
7
-
S
VDS=10V, ID=6A
IGSS
-
-
±100
nA
VGS= ±8V
-
-
1
uA
VDS=20V, VGS=0
-
-
25
uA
VDS=16V, VGS=0
-
-
25
-
-
30
-
-
40
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
Static Drain-Source On-Resistance
IDSS
RDS(ON)
V/
Test Conditions
VGS=0, ID=250uA
Reference to 25 , ID=1mA
VGS=10V, ID=8A
m
VGS=4.5V, ID=6A
VGS=2.5V, ID=5.2A
Total Gate Charge2
Qg
-
18.9
-
Gate-Source Charge
Qgs
-
2.1
-
Gate-Drain (“Miller”) Change
Qgd
-
2.4
-
Td(on)
-
14.3
-
Tr
-
11.9
-
Td(off)
-
22.1
-
Tf
-
16.7
-
Input Capacitance
Ciss
-
614
-
Output Capacitance
Coss
-
151
-
Reverse Transfer Capacitance
Crss
-
116
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.3
V
IS=18A, VGS=0V, Tj=25
IS
-
-
18
A
VD= VG=0V, VS=1.3V
ISM
-
-
30
A
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
nC
ID=6A
VDS=10V
VGS=10V
ns
VDS=10V
ID=1A
VGS=4.5V
RG=6
RL=10
pF
VGS=0V
VDS=8V
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
Continuous Source Current(Body Diode)
Pulsed Source Current(Body Diode)
1
Test Conditions
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GI3055S
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ISSUED DATE :2006/05/19
REVISED DATE :2006/11/09B
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. Transconductance v.s.
Drain Current
Fig 5. Breakdown Voltage
v.s. Junction Temperature
GI3055S
Fig 2. Transfer Characteristics
Fig 4. On-Resistance v.s.
Junction Temperature
Fig 6. Body Diode Forward Voltage
v.s. Source Current
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ISSUED DATE :2006/05/19
REVISED DATE :2006/11/09B
Fig 7. Maximum Safe Operating Area
Fig 9. Gate Charge Characteristics
Fig 11. Switching Time Circuit
GI3055S
Fig 8. Gate Threshold Voltage
v.s. Junction Temperature
Fig 10. Typical Capacitance Characteristics
Fig 12. Switching Time Waveform
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ISSUED DATE :2006/05/19
REVISED DATE :2006/11/09B
Fig 13. Normalized Thermal Transient Impedance Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GI3055S
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