GTM GJ3669

ISSUED DATE :2005/08/31
REVISED DATE :2005/11/28B
GJ3669
NPN EPITAXIAL PLANAR T RANSISTOR
Description
The GJ3669 is designed for using in power amplifier applications, power switching applications.
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.40
3.00
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
80
V
Collector to Emitter Voltage
VCEO
80
V
Emitter to Base Voltage
VEBO
5
V
Collector Current (DC)
IC
2
A
Total Device Dissipation (TA=25 )
PD
1.25
W
Junction Temperature
TJ
150
Storage Temperature
Tstg
-55 ~ +150
Electrical Characteristics (TA = 25
Symbol
unless otherwise noted)
Min.
Typ.
Max.
Unit
BVCBO
80
-
-
V
Test Conditions
BVCEO
80
-
-
V
IC=10mA, IB=0
BVEBO
ICBO
IEBO
*VCE(sat)
5
-
0.15
1
1
0.5
V
uA
uA
V
IE=100uA, IC=0
VCB=80V, IE=0
VEB=5V, IC=0
IC=1A, IB=50mA
*VBE(sat)
*hFE1
*hFE2
fT
70
40
-
0.9
100
1.2
240
-
V
MHz
IC=1A, IB=50mA
VCE=2V, IC=0.5A
VCE=2V, IC=1.5A
VCE=2V, IE=500mA, f=100MHz
Cob
-
30
-
pF
ton (Turn-On Time)
-
0.2
-
us
tstg (Storage Time)
-
1.0
-
us
tf (Fall Time)
-
0.2
-
us
IC=100uA, IE=0
VCB=10V, IE=0, f=1MHz
VCC=30V, RL=30 ,
IC=1A,
IB1=-IB2=50mA,
Duty Cycle 1%
*Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Classification Of hFE1
Rank
Range
GJ3669
O
70 ~ 140
Y
120 ~ 240
Page: 1/2
ISSUED DATE :2005/08/31
REVISED DATE :2005/11/28B
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ3669
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