ISSUED DATE :2005/08/31 REVISED DATE : G S M B TA 0 6 NPN SILICON TRANSISTOR Description The GSMBTA06 is designed for general purpose amplifier applications. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Electrical Characteristics(Ta = 25 Symbol Ratings +150 -55~+150 80 80 4 500 225 Unit V V V mA mW ,unless otherwise noted) Min. Typ. Max. Unit BVCBO 80 - - V IC=100uA, IE=0 BVCEO 80 - - V IC=1mA, IB=0 BVEBO 4 - - V IE=100uA, IC=0 ICBO - - 100 nA VCB=80V, IE=0 ICEO - - 100 nA VCE=80V, IB=0 *VCE(sat) - - 250 mV IC=100mA, IB=10mA V *VBE(on) Test Conditions - - 1.2 *hFE1 50 - - VCE=1V, IC=10mA *hFE2 50 - - VCE=1V, IC=100mA fT 100 - - MHz VCE=1V, IC=100mA VCE=2V, IC=10mA, f=100MHz * Pulse Test: Pulse Width GSMBTA06 380 s, Duty Cycle 2% Page: 1/2 ISSUED DATE :2005/08/31 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSMBTA06 Page: 2/2