ISSUED DATE :2005/07/15 REVISED DATE : GJ4672 NPN EPITAXIAL SILICON TRANSISTOR Description The GJ4672 is designed for low frequency amplifier applications. Features Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=1A/50mA Excellent DC current gain characteristics Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings (TA=25 ) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 6 V Collector Current (DC) IC 2 A Collector Current (Pulse PW=10ms) IC 5 A Total Device Dissipation (TA=25 ) PD 1.5 W Total Device Dissipation (TC=25 ) PD 10 W Junction Temperature TJ 150 Storage Temperature Tstg -55 ~ +150 Electrical Characteristics (TA = 25 Symbol unless otherwise noted) Min. Typ. Max. Unit BVCBO 60 - - V BVCEO 50 - - V IC=1mA, IB=0 BVEBO ICBO IEBO *VCE(sat) 6 - 0.1 100 100 0.35 V nA nA V IE=50uA, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 IC=1A, IB=50mA *hFE 120 - 400 fT - 210 - MHz Cob - 25 - pF Test Conditions IC=50uA, IE=0 VCE=2V, IC=500mA VCE=2V, IE=500mA, f=100MHz VCB=10V, IE=0, f=1MHz *Pulse Test: Pulse Width 380 s, Duty Cycle 2% Classification Of hFE Rank Range GJ4672 A 120 ~ 240 B 200 ~ 400 Page: 1/2 ISSUED DATE :2005/07/15 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GJ4672 Page: 2/2