CORPORATION GM1386 ISSUED DATE :2004/02/09 REVISED DATE :2005/08/24B PNP E PITAX I AL P L ANAR T RANS ISTO R Description The GM1386 is an epitaxial planar type PNP silicon transistor. Features Low collector saturation voltage : VCE (sat)= -0.35V(Typ.) @ IC/IB=-4A/-0.1A Excellent DC current gain characteristics. Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current 1 Collector Current (Pulse)* Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Ratings +150 -55~+150 -30 -20 -6 -5 -10 2 0.5 (2.0* ) Unit V V V A A W * 1. Single pulse, PW=10ms. * 2. When mounted on a 40*40*0.7 mm ceramic board. Electrical Characteristics(Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -30 -20 -6 82 - Typ. 120 60 ,unless otherwise noted) Max. Unit Test Conditions V IC=-50uA , IE=0 V IC=-1mA, IB=0 V IE=-50uA ,IC=0 -0.5 uA VCB=-20V, IE=0 -0.5 uA VEB=-5V, IC=0 -1.0 V IC=-4A, IB=-100mA 390 VCE=-2V, IC=-500mA MHz VCE=-6V, IE=50mA, f=30MHz pF VCB=-20V, IE=0, f=1MHz * Pulse Test: Pulse Width Classification Of hFE Rank Range GM1386 P 82 ~ 180 Q 120 ~ 270 380 s, Duty Cycle 2% R 180 ~ 390 Page: 1/3 CORPORATION ISSUED DATE :2004/02/09 REVISED DATE :2005/08/24B Characteristics Curve GM1386 Page: 2/3 CORPORATION ISSUED DATE :2004/02/09 REVISED DATE :2005/08/24B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GM1386 Page: 3/3