CORPORATION GM162 ISSUED DATE :2004/11/01 REVISED DATE : P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID Description -30V 80m -3.2A The GM162 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Features Lower on-resistance Ultra high-speed switching Applications Notebook PCs Cellular and portable phones On-board power supplies Li-ion battery Systems Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Symbol Ratings Unit VDS -30 V 12 V Continuous Drain Current3 ID @Ta=25 -3.2 A 3 ID @Ta=70 -2.6 A -10 A PD@Ta=25 2 W Tj, Tstg -55 ~ +150 Gate-Source Voltage VGS Continuous Drain Current IDM Pulsed Drain Current1,2 Power Dissipation Operating Junction and Storage Temperature Range Linear Derating Factor 0.01 Thermal Data Parameter Thermal Resistance Junction-ambient 3 Max. Symbol Ratings Rthj-amb 90 W/ Unit /W 1/4 CORPORATION Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Unless otherwise specified) Symbol Min. Typ. Max. Unit BVDSS -30 - - V - -0.1 - -0.5 - -1.2 BVDSS/ Tj Breakdown Voltage Temperature Coefficient VGS(th) ISSUED DATE :2004/11/01 REVISED DATE : V/ Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA V VDS= VGS, ID=-250uA Forward Transconductance gfs - 9 - S VDS=-5.0V ,ID=-3.0A Gate-Source Leakage Current IGSS - - 100 nA VGS= - - -1 uA VDS=-30V, VGS=0 - - -25 uA VDS=-24V, VGS=0 - - 60 Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 2 IDSS RDS(ON) - - 80 - - 150 Total Gate Charge Qg - 10 18 Gate-Source Charge Qgs - 1.8 - Qgd - 3.6 Td(on) - 7 Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time 12V ID=-3.2A, VGS =-10V m ID=-3.0A, VGS =-4.5V ID=-2.0A, VGS =-2.5V ID=-3.2A nC VDS=-24V - VGS=-4.5V ns VDS=-15V ID=-3.2A VGS=-10V RG=3.3 RD=4.6 pF VGS=0V VDS=-25V f=1.0MHz Tr - 15 - Td(off) - 21 - Tf - 15 - Input Capacitance Ciss - 735 1325 Output Capacitance Coss - 100 - Reverse Transfer Capacitance Crss - 80 - Source-Drain Diode Forward On Voltage2 VSD - - -1.2 V IS=-1.2A, VGS =0 Reverse Recovery Time Trr - 24 - ns Reverse Recovery Charge Qrr - 19 - nC IS=-3.2A, VGS =0 dI/dt=100A/ s Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board;270 /w when mounted on min. copper pad. Characteristics Curve 2/4 CORPORATION ISSUED DATE :2004/11/01 REVISED DATE : 3/4 CORPORATION ISSUED DATE :2004/11/01 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4