GTM GSS4224

Pb Free Plating Product
ISSUED DATE :2005/04/12
REVISED DATE :2005/09/30B
GSS4224
BVDSS
RDS(ON)
ID
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
30V
14m
10A
Description
The GSS4224 provide the designer with the best combination of fast switching, ruggedized device design, ultra
low on-resistance and cost-effectiveness.
Features
*Low On-Resistance
*Simple Drive Requirement
*Dual N MOSFET Package
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
5.80
4.80
3.80
0
0.40
0.19
6.20
5.00
4.00
8
0.90
0.25
REF.
M
H
L
J
K
G
Millimeter
Min.
Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45
1.27 TYP.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
Ratings
Unit
VDS
30
V
VGS
20
V
Continuous Drain Current
3
ID @TA=25
10
A
Continuous Drain Current
3
ID @TA=70
8
A
30
A
2
W
Pulsed Drain Current
1
IDM
PD @TA=25
Total Power Dissipation
Linear Derating Factor
0.016
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Symbol
Value
Rthj-amb
62.5
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
GSS4224
3
Max.
Unit
/W
Page: 1/4
ISSUED DATE :2005/04/12
REVISED DATE :2005/09/30B
Electrical Characteristics(Tj = 25
Parameter
Unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
0.03
-
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V
VDS=VGS, ID=250uA
gfs
-
16
-
S
VDS=10V, ID=10A
IGSS
-
-
100
nA
VGS=
-
-
1
uA
VDS=30V, VGS=0
-
-
25
uA
VDS=24V, VGS=0
-
-
14
-
-
20
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance2
IDSS
RDS(ON)
V/
m
Test Conditions
VGS=0, ID=250uA
Reference to 25 , ID=1mA
20V
VGS=10V, ID=10A
VGS=4.5V, ID=7A
Total Gate Charge2
Qg
-
23
15
Gate-Source Charge
Qgs
-
6
-
Gate-Drain (“Miller”) Change
Qgd
-
14
-
Td(on)
-
12
-
Tr
-
8
-
Td(off)
-
34
-
Tf
-
16
-
Input Capacitance
Ciss
-
1910
3070
Output Capacitance
Coss
-
400
-
Reverse Transfer Capacitance
Crss
-
280
-
Rg
-
0.9
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.2
V
IS=1.7A, VGS=0V, Tj=25
Reverse Recovery Time
Trr
-
30
-
ns
Reverse Recovery Charge
Qrr
-
24
-
nC
IS=10A, VGS=0V
dI/dt=100A/ s
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Gate Resistance
nC
ID=10A
VDS=24V
VGS=4.5V
ns
VDS=15V
ID=1A
VGS=10V
RG=3.3
RD=15
pF
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
2
Test Conditions
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
2
3. Surface mounted on 1 in copper pad of FR4 board; 135 /W when mounted on Min. copper pad.
GSS4224
Page: 2/4
ISSUED DATE :2005/04/12
REVISED DATE :2005/09/30B
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
GSS4224
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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ISSUED DATE :2005/04/12
REVISED DATE :2005/09/30B
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GSS4224
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