GTM GSS4501

Pb Free Plating Product
ISSUED DATE :2005/08/24
REVISED DATE :2006/11/09C
N-CH BVDSS
30V
N-CH RDS(ON) 28m
N-CH ID
7A
P-CH BVDSS
-30V
N-CH RDS(ON) 50m
N-CH ID
-5.3A
GSS4501
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GSS4501 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
5.80
4.80
3.80
0°
0.40
0.19
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
6.20
5.00
4.00
8°
0.90
0.25
Ratings
N-channel P-channel
REF.
M
H
L
J
K
G
Millimeter
Min.
Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Unit
VDS
30
-30
V
VGS
±20
±16
V
Continuous Drain Current
3
ID @TA=25
7
-5.3
A
Continuous Drain Current
3
ID @TA=70
5.8
-4.7
A
20
-20
A
Pulsed Drain Current
1
IDM
Total Power Dissipation
PD @TA=25
Linear Derating Factor
2.0
0.016
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Symbol
Value
Rthj-a
62.5
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
GSS4501
3
Max.
Unit
/W
Page: 1/9
ISSUED DATE :2005/08/24
REVISED DATE :2006/11/09C
N-Channel Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
0.02
-
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V
VDS=VGS, ID=250uA
gfs
-
13
-
S
VDS=10V, ID=7A
IGSS
-
-
±100
nA
VGS= ±20V
-
-
1
uA
VDS=30V, VGS=0
-
-
25
uA
VDS=24V, VGS=0
-
-
28
-
-
42
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance2
IDSS
RDS(ON)
V/
m
Test Conditions
VGS=0, ID=250uA
Reference to 25 , ID=1mA
VGS=10V, ID=7A
VGS=4.5V, ID=5A
Total Gate Charge2
Qg
-
8.4
-
Gate-Source Charge
Qgs
-
2.1
-
Gate-Drain (“Miller”) Change
Qgd
-
4.7
-
Td(on)
-
6
-
Tr
-
5.2
-
Td(off)
-
18.8
-
Tf
-
4.4
-
Input Capacitance
Ciss
-
645
-
Output Capacitance
Coss
-
150
-
Reverse Transfer Capacitance
Crss
-
95
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.2
V
IS=7A, VGS=0V, Tj=25
IS
-
-
1.67
A
VD=VG=0V, VS=1.2V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
nC
ID=7A
VDS=24V
VGS=4.5V
ns
VDS=15V
ID=1A
VGS=10V
RG=3.3
RD=15
pF
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
Continuous Source Current (Body Diode)
Test Conditions
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 135 /W when mounted on Min. copper pad.
GSS4501
Page: 2/9
ISSUED DATE :2005/08/24
REVISED DATE :2006/11/09C
P-Channel Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
-0.028
-
Gate Threshold Voltage
VGS(th)
-1.0
-
-3.0
V
VDS=VGS, ID=-250uA
gfs
-
8.5
-
S
VDS=-10V, ID=-5.3A
IGSS
-
-
±100
nA
VGS= ±16V
-
-
-1
uA
VDS=-30V, VGS=0
-
-
-25
uA
VDS=-24V, VGS=0
-
-
50
-
-
90
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance2
IDSS
RDS(ON)
V/
m
Test Conditions
VGS=0, ID=-250uA
Reference to 25 , ID=-1mA
VGS=-10V, ID=-5.3A
VGS=-4.5V, ID=-4.2A
Total Gate Charge2
Qg
-
20
-
Gate-Source Charge
Qgs
-
3.5
-
Gate-Drain (“Miller”) Change
Qgd
-
2
-
Td(on)
-
12
-
Tr
-
20
-
Td(off)
-
45
-
Tf
-
27
-
Input Capacitance
Ciss
-
790
-
Output Capacitance
Coss
-
440
-
Reverse Transfer Capacitance
Crss
-
120
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
-1.2
V
IS=-2.6A, VGS=0V, Tj=25
IS
-
-
-1.67
A
VD=VG=0V, VS=-1.2V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
nC
ID=-5.3A
VDS=-15V
VGS=-10V
ns
VDS=-15V
ID=-1A
VGS=-10V
RG=6
RD=15
pF
VGS=0V
VDS=-15V
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
Continuous Source Current (Body Diode)
Test Conditions
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 135 /W when mounted on Min. copper pad.
GSS4501
Page: 3/9
ISSUED DATE :2005/08/24
REVISED DATE :2006/11/09C
Characteristics Curve N-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
Fig 6. Type Power Dissipation
GSS4501
Page: 4/9
ISSUED DATE :2005/08/24
REVISED DATE :2006/11/09C
N-Channel
Fig 7. Maximum Safe Operating Area
Fig 9. Gate Charge Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
GSS4501
Fig 8. Effective Transient Thermal Impedance
Fig 10. Typical Capacitance Characteristics
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Page: 5/9
ISSUED DATE :2005/08/24
REVISED DATE :2006/11/09C
N-Channel
GSS4501
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Page: 6/9
ISSUED DATE :2005/08/24
REVISED DATE :2006/11/09C
P-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
Fig 6. Type Power Dissipation
GSS4501
Page: 7/9
ISSUED DATE :2005/08/24
REVISED DATE :2006/11/09C
P-Channel
Fig 7. Maximum Safe Operating Area
Fig 9. Gate Charge Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
GSS4501
Fig 8. Effective Transient Thermal Impedance
Fig 10. Typical Capacitance Characteristics
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Page: 8/9
ISSUED DATE :2005/08/24
REVISED DATE :2006/11/09C
P-Channel
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GSS4501
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