Pb Free Plating Product ISSUED DATE :2004/10/13 REVISED DATE :2005/08/10B GTS9928E BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 20V 22m 5A Description The GTS9928E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Features *Low on-resistance *Capable of 2.5V gate drive *Optimal DC/DC battery application Package Dimensions REF. Millimeter Min. Max. - 1.20 0.05 0.15 b c 0.19 0.30 0.09 D 2.90 A A1 REF. E E1 Millimeter Min. Max. 6.20 6.60 4.30 4.50 0.20 e L 0.45 0.75 3.10 S 0° 8° 0.65 BSC Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 3 12 V Drain Current , [email protected] ID @Ta=25 5.0 A 3 ID @Ta=70 3.5 A 25 A 1 W Drain Current , [email protected] Pulsed Drain Current 1 IDM PD @Ta=25 Power Dissipation Linear Derating Factor 0.008 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Ratings Rthj-a 125 W/ Thermal Data Parameter Thermal Resistance Junction-ambient 3 Max. Unit /W 1/6 ISSUED DATE :2004/10/13 REVISED DATE :2005/08/10B Electrical Characteristics(Tj = 25 Parameter Unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 20 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.02 - Gate Threshold Voltage VGS(th) 0.5 - - V VDS=VGS, ID=250uA gfs - 21 - S VDS=10V, ID=5A IGSS - - 10 uA VGS= - - 1 uA VDS=20V, VGS=0 - - 25 uA VDS=20V, VGS=0 - - 22 - - 28 Qg - 15.9 - Gate-Source Charge Qgs - 1.5 - Gate-Drain (“Miller”) Change Qgd - 7.4 - Td(on) - 6.2 - Tr - 9 - Td(off) - 30 - Tf - 11 - Input Capacitance Ciss - 530 - Output Capacitance Coss - 245 - Reverse Transfer Capacitance Crss - 125 - Symbol Min. Typ. Max. Unit VSD - - 1.2 V IS=5A, VGS=0, Tj=25 IS - - 0.83 A VD=VG=0V, VS=1.2V Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 2 Total Gate Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time IDSS RDS(ON) V/ m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA 12V VGS=4.5V, ID=5A VGS=2.5V, ID=2A, nC ID=5A VDS=10V VGS=4.5V ns VDS=10V ID=1A VGS=4.5V RG=3.3 RD=10 pF VGS=0V VDS=20V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Continuous Source Current(Body Diode) Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 208 /W when mounted on Min. copper pad. 2/6 ISSUED DATE :2004/10/13 REVISED DATE :2005/08/10B Characteristics Curve 3/6 ISSUED DATE :2004/10/13 REVISED DATE :2005/08/10B 4/6 ISSUED DATE :2004/10/13 REVISED DATE :2005/08/10B 5/6 ISSUED DATE :2004/10/13 REVISED DATE :2005/08/10B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 6/6