PHOTODIODE Si photodiode S6428-01, S6429-01, S6430-01, S7505-01 RGB color sensor S6428-01, S6429-01 and S6430-01 are color sensors designed to respectively detect monochromatic colors of blue (λp=460 nm), green (λp=540 nm) and red (λp=660 nm). S7505-01 use a 3-channel (RGB) photodiode having blue, green and red sensitivities, and is molded into a surface-mountable package. Features Applications l White balance adjustment l Color identification l Projector and TV brightness level detection l Color control l Light source color temperature detection S6428-01, S6429-01, S6430-01 l Plastic package (6 × 8 mm) l Spectral response range S6428-01: 400 to 540 nm (λp=460 nm) S6429-01: 480 to 600 nm (λp=540 nm) S6430-01: 590 to 720 nm (λp=660 nm) l Insensitive to near IR range l High sensitivity S6428-01: 0.22 A/W Typ. (λ=λp) S6429-01: 0.27 A/W Typ. (λ=λp) S6430-01: 0.45 A/W Typ. (λ=λp) l Low dark current S7505-01 l 3 ch (RGB) Si photodiode l Surface mountable plastic package (9 × 9.6 mm) l High sensitivity ■ General ratings / Absolute maximum ratings Type No. S6428-01 S6429-01 S6430-01 S7505-01 Di mensional outline Active area size Effective active area (mm) (mm 2) 2.4 × 2.8 6.7 ➀ ➁ Absolute maximum ratings Storage Operating Reverse temperature temperature voltage Topr Tstg VR Max. (V) (°C) (°C) 10 -10 to +60 Temp. coefficient of ID Rise time tr V R =0 V R L=1 kΩ 10 to 90 % (times/°C) (µs) Terminal capacitance Ct V R=0 V f=10 kHz Typ. Max. (pF) (pF) 1.12 0.5 -20 to +70 Green, red: 2.25 Green, red: 1.5 × 1.5 Blue : 1.5 × 1.5 (2 elements) Blue : 4.5 ■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) (nm) S6428-01 400 to 540 S6429-01 480 to 600 S6430-01 590 to 720 Blue 400 to 540 S7 50 5-01 Green 480 to 600 Red 590 to 720 *1: All elements. *2: Defined as shown in the figure at right. Photo sensitivity S λ=λp (nm) 460 540 660 460 540 620 RELATIVE SENSITIVITY (%) Type No. Peak Spectral response sensitivity range wavelength λ λp (A/W) 0.22 0.27 0.45 0.18 0.23 0.16 Dark current ID V R =1 V Typ. (pA) Max. (pA) 5 20 10 * 1 200 *1 100 50 FWHM WAVELENGTH (nm) KSPDC0031EA 200 400 150 300 80 150 Spectral response half width FWHM * 2 (nm) 90 70 90 90 60 70 S6428-01, S6429-01, S6430-01, S7505-01 Si photodiode ■ Spectral response (S6428-01, S6429-01, S6430-01) (Typ. Ta=25 ˚C) S6430-01 (Red) QE=100 % 0.4 0.3 S6429-01 (Green) 0.2 (Typ. Ta=25 ˚C) 0.3 QE=100 % PHOTO SENSITIVITY (A/W) PHOTO SENSITIVITY (A/W) 0.6 0.5 ■ Spectral response (S7505-01) S6428-01 (Blue) Green 0.2 Blue Red 0.1 0.1 0 300 400 500 600 700 800 900 1000 1100 0 200 1200 300 500 400 WAVELENGTH (nm) 600 700 800 900 1000 1100 1200 WAVELENGTH (nm) KSPDB0141EC ■ Dark current vs. reverse voltage ■ Terminal capacitance vs. reverse voltage (Typ. Ta=25 ˚C) (Typ. Ta=25 ˚C) 1 nF TERMINAL CAPACITANCE 1 nA 100 pA DARK CURRENT KMPDB0217EA S7505-01 10 pA 1 pA S6428-01, S6429-01, S6430-01 100 pF S7505-01 (Blue) S6428-01, S6429-01 S6430-01 100 fA 0.01 0.1 1 S7505-01 (Red, Green) 10 10 pF 0.1 100 1 10 100 REVERSE VOLTAGE (V) REVERSE VOLTAGE (V) KSPDB0143EC KSPDB0142EC ■ Dimensional outlines (unit: mm) ➁ S7505-01 1.5 ± 0.4 (6 ×) 0.4 ACTIVE AREA 2.8 × 2.4 ACTIVE AREA FILTER PHOTOSENSITIVE SURFACE 1.5 FILTER PHOTOSENSITIVE SURFACE 1.5 1.5 ANODE (Blue) CATHODE COMMON ANODE (Green) ANODE (Red) CATHODE COMMON NC Blue Blue 1.5 0.85 0.6 (2 ×) 10˚ KSPDA0056EA 0.2 0.1 ± 0.1 Tolerance unless otherwise noted: ±0.15 0.55 (2 ×) 10˚ 7.8 +0 - 0.1 1.5 0.7 ± 0.3 0.2 0.7 ± 0.3 0.2 0.3 1.4 12.0 ± 0.3 2.2 +0 - 0.1 8.0 +0 - 0.1 1.0 4.5 -+0.2 0.5 (2 ×) 10˚ B B G R 9.6 * 6.0 +0 - 0.3 2.54 2.54 0.8 3.4±0.3 1.5 ± 0.4 9.0 * INDEX (C 0.7) FILTER (8.5) (2 ×) 10˚ ➀ S6428-01, S6429-01, S6430-01 Green Red DETAILS OF PHOTODIODE Tolerance unless otherwise noted: ±0.1 Chip position accuracy with respect to the package dimensions marked * X, Y ≤ ±0.2 θ ≤ ±2˚ KMPDA0073ED Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KSPD1013E04 Jul. 2003 DN