PHOTODIODE Si photodiode S2684-254 Photodiode with interference filter for monochromatic light (254 nm) detection S2684-254 uses an interference filter as its window to provide high sensitivity only to monochromatic light. The spectral response width is as narrow as 10 nm (FWHM), allowing accurate photometry without being adversely influenced by stray light. As the type No. implies, S2684-254 has a peak sensitivity wavelength at 254 nm. However, variant types are also available with different peak sensitivity wavelengths such as 340, 405, 500, 520, 560, 650 and 700 nm. Features Applications l Monochromatic light detection with high sensitivity l Low dark current l Analytical instruments l UV monitor (mercury lamp monitor, etc.) ■ Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 5 -10 to +60 -20 to +70 Unit V °C °C ■ Electrical and optical characteristics (Ta=25 °C) Parameter Peak sensitivity wavelength Spectral response half-width Photo sensitivity Dark current Temperature coefficient of ID Rise time Terminal capacitance Shunt resistance Noise equivalent power Symbol λp FWHM S ID TCID tr Ct Rsh NEP Condition λ=λp VR=10 mV VR=0 V, RL=1 kΩ VR=0 V, f=10 kHz VR=10 mV VR=0 V, λ=λp Min. 252 8 0.4 - Typ. 254 10 0.02 1.12 1 380 5 9.1 × 10-14 Max. 256 12 25 - Unit nm nm A/W pA times/°C µs pF GΩ W/Hz1/2 1 Si photodiode S2684-254 ■ Spectral response (S2684-254, etc.) (Typ. Ta=25 ˚C) 0.2 PHOTO SENSITIVITY (A/W) S2684-650 S2684-560 (λp=560 nm) (λp=650 nm) S2684-700 (λp=700 nm) S2684-520 (λp=520 nm) 0.15 S2684-500 (λp=500 nm) 0.1 S2684-405 (λp=405 nm) S2684-340 (λp=340 nm) 0.05 S2684-254 (λp=254 nm) 0 200 Note) Made to order other than S2684-254. 300 400 500 600 700 800 WAVELENGTH (nm) KSPDB0135EB ■ Dimensional outline (unit: mm) 9.1 ± 0.2 0.45 LEAD 20 0.4 MAX. 3.6 PHOTOSENSITIVE SURFACE 9.6 ± 0.2 8.3 ± 0.1 2.6 ± 0.2 WINDOW 6.1 ± 0.1 5.08 ± 0.25 CASE KSPDA0081EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KSPD1014E03 Aug. 2006 DN