PHOTODIODE Si photodiode S9682, S9683 Highly reliable photodiode for VUV detection S9682 and S9683 are Si photodiodes specifically designed to detect VUV (vacuum ultraviolet) radiation with high reliability. These photodiodes are hermetically sealed in a metal package with a quartz window. There is no outgassing from the inside of the package, eliminating the cause of decrease in VUV sensitivity. Features Applications l Highly stable sensitivity and dark current against ArF excimer laser radiation (λ=193 nm) l Hermetically sealed metal package with quartz window l Large active area: l ArF excimer laser detection l UV detection S9682: 5.8 × 5.8 mm (TO-8 metal package) S9683: 10 × 10 mm (1 inch metal package) ■ Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 5 -40 to +100 -55 to +125 Unit V °C °C ■ Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Spectral response range λ Peak sensitivity wavelength Photo sensitivity Dark current Terminal capacitance λp S ID Ct Rise time tr Condition 45 - S9682 Typ. 193 to 1000 760 60 0.02 1.0 - 2 Min. - λ=193 nm VR=10 mV VR=0 V, f=10 kHz VR=0 V, RL=1 kΩ 10 to 90 % Max. Min. - - 0.5 - 45 - S9683 Typ. 193 to 1000 760 60 0.05 4.0 - - 9 Max. Unit - nm 1.0 - nm mA/W nA nF - µs 1 Si photodiode S9682, S9683 ■ Variation in sensitivity due to VUV exposure [Typ. ArF excimer laser, 0.1 mJ/cm2/pulse, f=100 Hz, λ=193 nm, pulse width=15 ns (FWHM)] RELATIVE SENSITIVITY (%) 120 100 80 S9682, S9683 60 40 CONVENTIONAL TYPE 20 0 6 1 × 10 5 × 10 6 1 × 107 NUMBER OF SHOT KSPDB0254EA ■ Dimensional outlines (unit: mm) S9682 S9683 13.9 ± 0.2 42.0 ± 0.3 34.0 ± 0.2 12.35 ± 0.1 ( 24.5) 9.1 ± 0.1 ACTIVE AREA 10 × 10 Y (2 ×) 0.085 0.5 MAX. 7.5 ± 0.2 (15.0) PHOTOSENSITIVE SURFACE 0.45 LEAD 7.1 ± 0.3 QUARTZ WINDOW (t=1.0) (1.9) 2.0 QUARTZ WINDOW 4.5 ± 0.2 PHOTOSENSITIVE SURFACE 19 ± 0.5 ACTIVE AREA 5.8 × 5.8 4 27.4 ± 0.2 X WINDOW 16.0 ± 0.2 ANODE TERMINAL MARK 1.4 COMMON TO CASE 7.62 ± 0.2 Center of active area relative to center of cap -0.485≤X≤+0.315 -0.4≤Y≤+0.4 COMMON TO CASE KSPDA0165EB KSPDA0166EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KSPD1069E02 Feb. 2006 DN