ADE-208-155B(Z) HRW26 Silicon Schottky Barrier Diode for High Frequency Rectifying Rev. 2 Nov. 1994 Features Pin Arrangement • Low forward voltage drop. (VF =0.55V max) • High reverse voltage. (VR =40V max) 1 2 3 Ordering Information Type No. Laser Mark Package Code HRW26 HRW26 TO-220AB 1 2 1 Anode 2 Cathode 3 Anode 3 Absolute Maximum Ratings (Ta = 25°C) * Item Symbol Value Unit Repetitive peak reverse voltage VRRM 40 V Average forward current I o** 10 A Non-Repetitive peak forward surge current IFSM*** 70 A Junction temperature Tj 125 °C Storage temperature Tstg -40 to +125 °C * Per one device ** Square wave, Duty (1/2), Tc=95°C, Sum of two devices *** Half sine wave 10msec Electrical Characteristics (Ta = 25°C) * Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.55 V I F = 4.0 A Reverse current IR — — 1.0 mA VR = 40 V * Per one device HRW26 -2 10 10 Pulse test -3 1.0 Reverse current I R (A) Forward current I F (A) Pulse test -1 10 -2 10 10 -4 10 -5 10 -3 -6 10 0 0.2 10 0.6 0.4 0.8 Forward voltage VF (V) 1.0 Fig.1 Forward current Vs. Forward voltage 0 10 30 40 20 Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage Unit: mm 0.1 φ 3.6 +– 0.08 Lot No. 1.5 Max 12.7 Min 18.5 ± 0.5 HRW26 4.8 Max 1.5 Max 15.3 Max 11.5 Max 9.8 Max 7.6 Min 6.3 Min 3.0 Max 1.27 Package Dimensions 7.8 ± 0.5 50 1 Anode 2 Cathode 3 Anode 0.5 Typ 0.76 ± 0.1 1 HITACHI Code TO-220AB 2 3 2.54 ± 0.5 5.1 ± 0.5 2.7 Max JEDEC Code TO-220AB EIAJ Code SC-46 Weight (g) 1.8