ETC AH212-S8G

AH212
The Communications Edge TM
Product Information
1 Watt High Linearity, High Gain InGaP HBT Amplifier
Product Features
Product Description
x 1800 – 2200 MHz
Functional Diagram
The AH212 is a high dynamic range two-stage driver
amplifier in a low-cost surface mount package. The
InGaP/GaAs HBT is able to achieve superior performance
for various narrowband-tuned application circuits with up
to +46 dBm OIP3 and +30 dBm of compressed 1-dB
power. The amplifier is housed in an industry-standard
SMT lead-free/green/RoHS-compliant SOIC-8 package.
All devices are 100% RF and DC tested.
x 26 dB Gain
x +30 dBm P1dB
x +46 dBm Output IP3
x +5V Single Positive Supply
x Internal Active Bias
x Lead-free/green/RoHS-compliant The product is targeted for use as linear driver amplifier for
various current and next generation wireless technologies
SOIC-8 Package
such as GPRS, GSM, CDMA, W-CDMA, and UMTS,
where high linearity and high power is required. The
internal active bias allows the AH212 to maintain high
linearity over temperature and operate directly off a +5 V
supply.
Applications
x Mobile Infrastructure
Units Min
Typ
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Noise Figure
W-CDMA Channel Power
MHz
MHz
dB
dB
dB
dBm
dBm
dB
dBm
+21
Operating Current Range , Icc
Device Voltage, Vcc
mA
V
400
5
@ -45 dBc ACLR
8 N/C
Vbias1 2
7 Vcc2 / RF Out
RF In 3
6 Vcc2 / RF Out
5 N/C
Vbias2 4
AH212-S8G
Function
Vc1
Input
Output
Vbias1
Vbias2
Vcc2
GND
N/C or GND
Pin No.
1
3
6, 7
2
4
6, 7
Backside Paddle
5, 8
Typical Performance (1)
Specifications (1)
Parameters
Vc1 1
1800
Max
Parameters
2200
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
IS-95A Channel Power
MHz
dB
dB
dB
dBm
dBm
1960
25.8
15
11
+30
+48.5
dBm
+23.5
W-CDMA Channel Power
dBm
2140
25
25
9
+29.5
+46
6.0
Units
@ -45 dBc ACPR
@ -45 dBc ACLR
Noise Figure
Supply Bias
dB
Typical
2140
25.0
25
9
+29.5
+46
+21
5.5
6.0
+5 V @ 400 mA
1. Test conditions unless otherwise noted: 25ºC, +5V, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Ordering Information
Rating
-40 to +85 qC
-65 to +150 qC
+26 dBm
+7 V
900 mA
6W
+250 ºC
Part No.
Description
AH212-S8G
(lead-free/green/RoHS-compliant SOIC-8 Package)
AH212-S8PCB1960
1960 MHz Evaluation Board
AH212-S8PCB2140
2140 MHz Evaluation Board
1 Watt, High Gain InGaP HBT Amplifier
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 1 of 5 November 2005
AH212
The Communications Edge TM
Product Information
1 Watt High Linearity, High Gain InGaP HBT Amplifier
Typical Device Data
S-Parameters (VCC = +5 V, ICC = 400 mA, T = 25 C, calibrated to device leads)
0.8
2.
0
2.
0
0.6
Swp Max
3GHz
6
0.
1.0
0.8
30
S22
Swp Max
3GHz
0.
4
DB(|S(2,1)|)
AH212
1.0
S11
Gain
35
0.
4
0
3.
0
3.
0
4.
0
4.
5. 0
5. 0
0 .2
0 .2
15
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
10.0
0
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0
0.2
20
0.4
10 .0
-1 0. 0
-4
.0
-5 .0
-3
.0
.0
Swp Min
0.05GHz
S(2,2)
AH212
-2
S(1,1)
AH212
.4
-0
Swp Min
0.05GHz
-1.0
3
-0.8
2.55
-0
.6
2.05
.0
-2
1.55
Frequency (GHz)
-1.0
1.05
-0.8
0.55
-0
.6
0.05
2
-3
.0
.4
-0
5
- 0.
-4
.0
-5 .0
- 0.2
10
-10. 0
Gain (dB)
25
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a band specific tuned circuit, it is expected
that actual gain will be higher. The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz
increment.
S-Parameters (VCC = +5 V, ICC = 400 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
-9.19
-4.58
-0.92
-2.81
-4.10
-10.08
-14.20
-7.51
-6.58
-6.67
-7.87
-11.42
-18.51
-8.70
-4.43
-2.78
-2.44
-130.35
-125.96
-169.81
160.59
134.99
97.76
-174.16
146.36
101.88
65.24
37.31
19.84
69.85
105.38
93.47
84.89
81.11
17.61
21.86
27.39
26.96
26.35
30.19
31.30
29.49
27.14
25.02
23.35
22.01
20.56
18.40
15.61
12.91
10.51
65.80
69.36
14.98
-55.64
-69.83
-108.08
-167.40
141.86
99.61
63.05
28.87
-5.81
-44.21
-84.80
-122.39
-156.41
167.98
-64.44
-58.42
-55.39
-50.75
-49.90
-46.20
-49.63
-44.88
-45.19
-46.75
-47.96
-44.88
-40.54
-38.49
-38.94
-39.25
-38.27
122.93
-135.96
49.47
78.75
59.30
44.46
25.99
48.15
29.86
33.97
24.08
70.88
52.01
31.21
23.84
-2.01
0.70
-2.71
-2.92
-3.04
-1.13
-0.86
-0.93
-1.05
-1.97
-2.76
-2.82
-2.53
-2.08
-1.45
-1.02
-0.89
-1.16
-1.34
-145.39
-160.72
-166.12
-169.23
-179.36
172.84
164.98
159.52
156.95
154.08
150.05
143.86
134.91
123.57
113.66
106.71
101.38
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014” FR4, single layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
shunt capacitor –C7. The markers and vias are spaced in 0.050” increments.
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 2 of 5 November 2005
AH212
The Communications Edge TM
Product Information
1 Watt High Linearity, High Gain InGaP HBT Amplifier
1960 MHz Application Circuit (AH212-S8PCB1960)
Typical RF Performance at 25 qC
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
Vcc = +5 V
1960 MHz
25.8 dB
-15 dB
-11 dB
+30 dBm
Channel Power
+23.5 dBm
(@-45 dBc ACPR, IS-95, 9 channels fwd)
Noise Figure
Device / Supply Voltage
Quiescent Current
C AP
ID=C9
C =47 p F
IND
ID=L1
L=18 nH
RES
ID=R2
R=0 O hm
5.5 dB
+5 V
400 mA
CAP
ID=C2
C=47 pF
CAP
ID=C1
C=47 pF
PORT
P=1
Z=5 0 Ohm
CAP
ID=C10
C=1000 p F
CAP
ID=C6
C=1000 pF
CAP
ID=C5
C=1 000 p F
+48.5 dBm
(+15 dBm / tone, 1 MHz spacing)
CAP
ID=C11
C=4.7E6 pF
SIZE 1210
IN D
ID =L2
L=18 nH
Size 0805
1
85
2 NET="AH212"
76
3
67
4
58
CA P
ID=C8
C=47 p F
RES
ID=R3
R=75 Ohm
All passive components are of size 0603
unless otherwise noted.
CAP
ID=C4
C=1000 pF
PO RT
P=2
Z=50 Ohm
TLINP
ID=TL1
Z0=50 Ohm
L=125 m il
Eeff=4.6
Lo ss=0
F0=0 M Hz
RES
ID=R1
R=10 Ohm
CAP
ID=C 7
C=2.7 pF
C7 is placed bet ween silkscree n marke r "2" and "3 " on W J’s e val
Board or @ 14 de gre es at 1.96G Hz away from pins 6 and 7.
VBC = +5 V
S21 vs. Frequency
28
S11 vs. Frequency
0
+25°C
25
23
1930
+25°C
1940
-40°C
1950
+85°C
1960
1970
1980
1990
-5
-10
-15
-20
-25
1930
-25
1930
1940
P1dBvs. Frequency
OIP3 (dBm)
P1dB (dBm)
50
1950
1960
1970
1980
45
40
+85°C
1990
Frequency(MHz)
40
35
1930
1940
45
40
35
-40
1990
-40
6
-45
5
4
35
17
18
-40°C
+25°C
-15
10
35
Temperature (°C)
60
85
ACPR vs. Channel Power
7
3
14
15
16
Output Power (dBm)
1980
ACPR (dBc)
NF (dB)
OIP3 (dBm)
50
13
1950 1960 1970
Frequency (MHz)
Noise Figure vs. Frequency
OIP3 vs. Output Power
freq. = 1960 MHz, 1961 MHz, +25°C
55
1950 1960 1970 1980 1990
freq. = 1960 MHz, 1961 MHz, +15 dBm/tone
55
OIP3 (dBm)
1940
+25°C
+85°C
OIP3 vs. Temperature
+25°C, +15 dBm/tone
45
28
-40°C
1940
-40°C
Frequency (MHz)
50
29
12
1950 1960 1970 1980 1990
+25°C
OIP3 vs. Frequency
55
30
27
-15
Frequency (MHz)
Circuit boardsareoptimizedat 1960MHz
31
-10
-20
Frequency (MHz)
26
1930
+85°C
S22 (dB)
26
24
-40°C
-5
S11 (dB)
S21 (dB)
27
S22 vs. Frequency
0
IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 1960 MHz
-50
-55
-60
-65
+85°C
-40 C
+25 C
+85 C
-70
2
1930
1940
1950
1960
1970
1980
18
1990
19
20
21
22
23
24
25
Output Channel Power (dBm)
Frequency (MHz)
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 3 of 5 November 2005
AH212
The Communications Edge TM
Product Information
1 Watt High Linearity, High Gain InGaP HBT Amplifier
2140 MHz Application Circuit (AH212-S8PCB2140)
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
2140 MHz
25 dB
-25 dB
-9 dB
+29.5 dBm
Vcc = + 5 V
Channel Power
Noise Figure
Device / Supply Voltage
Quiescent Current
CAP
ID=C9
C=47 p F
IN D
ID =L 1
L=18 nH
RES
ID=R2
R=0 Oh m
C AP
ID =C 2
C =47 pF
CAP
ID=C1
C=47 pF
PORT
P=1
Z=5 0 Ohm
+21 dBm
(@-45 dBc ACLR, W-CDMA, Test model
1 +64 DPCH, ± 5MHz offset)
IND
ID=L2
L=1 8 nH
Size 0805
85
1
2 NET="AH 21 2"
7
6
3
6
7
4
6.0 dB
+5 V
400 mA
CAP
ID =C 10
C=1000 pF
CAP
ID=C6
C=1000 p F
CAP
ID=C5
C=100 0 pF
+46 dBm
(+15 dBm / tone, 1 MHz spacing)
CAP
ID=C11
C=4.7 E6 pF
SIZ E 1210
CAP
ID=C4
C=1000 pF
All passive components are of size 0603
unless otherwise noted.
PORT
P=2
Z=50 Ohm
TLINP
ID=TL 1
Z0=50 Oh m
L=110 mi l
Eeff=4.6
Loss=0
F0=0 MH z
58
RES
ID=R1
R=1 0 Ohm
RES
ID=R3
R=75 Ohm
CAP
ID =C8
C=47 pF
C AP
ID=C 7
C =2 .4 p F
C7 is placed at silkscreen marker "2" on WJ’s eval board
or @ 12.2 deg at 2.14GHZ away fr om pins 6 and 7.
VBC = +5 V
S21 vs. Frequency
27
-15
-20
-25
+25°C
2120
-40°C
2130
2140
2150
2160
-35
2110
2170
2120
2130
2140
2150
2160
2170
Frequency (MHz)
OIP3 (dBm)
50
45
40
35
2110
2120
2130 2140 2150
Frequency (MHz)
2160
35
-40
2170
Noise Figure vs. Frequency
OIP3vs. Output Power
freq. =2140MHz, 2141MHz, +25°C
55
6
5
4
13
14
15
16
Output Power (dBm)
17
18
60
85
ACLR vs. Channel Power
ACLR (dBc)
NF (dB)
OIP3 (dBm)
40
10
35
Temperature (°C)
-40
7
45
-15
3GPP W-CDMA, Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz
8
50
2130 2140 2150 2160 2170
freq. = 2140 MHz, 2141 MHz, +15 dBm/tone
55
40
+85°C
+85°C
OIP3 vs. Temperature
+25°C, +15 dBm/tone
45
27
2120
2120
-40°C
Frequency (MHz)
OIP3 (dBm)
P1dB (dBm)
2130 2140 2150 2160 2170
50
28
+25°C
+25°C
-25
2110
OIP3 vs. Frequency
55
29
-40°C
-15
Frequency (MHz)
P1dB vs. Frequency
26
-10
-20
-30
+85°C
Circuit boards are optimized at 2140 MHz
30
35
12
+85°C
-5
Frequency (MHz)
25
2110
-40°C
S22 (dB)
S11 (dB)
S21 (dB)
24
S22 vs. Frequency
0
-10
25
22
2110
+25°C
-5
26
23
S11 vs. Frequency
0
-40°C
+25°C
-45
-50
-55
+85°C
-40 C
-60
3
2110
2120
2130
2140
2150
2160
18
2170
19
20
+25 C
21
+85 C
22
Output Channel Power (dBm)
Frequency (MHz)
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 4 of 5 November 2005
AH212
The Communications Edge TM
Product Information
1 Watt High Linearity, High Gain InGaP HBT Amplifier
AH212-S8G (Lead-Free SOIC-8 Package) Mechanical Information
This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free
(maximum 260qC reflow temperature) and lead (maximum 245qC reflow temperature) soldering processes.
Outline Drawing
Product Marking
The component will be marked with an
“AH212G” designator with an alphanumeric lot
code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating:
Value:
Test:
Standard:
Class 1B
Passes 500V to <1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating:
Value:
Test:
Standard:
Class IV
Passes Charged Device Model (CDM)
JEDEC Standard JESD22-C101
MSL Rating: Level 2 at +260 C convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
Mounting Configuration / Land Pattern
1. A heatsink underneath the area of the PCB for the mounted device
is recommended for proper thermal operation. Damage to the
device can occur without the use of one.
2. Ground / thermal vias are critical for the proper performance of this
device. Vias should use a .35mm (#80 / .0135” ) diameter drill and
have a final plated thru diameter of .25 mm (.010” ).
3. Add as much copper as possible to inner and outer layers near the
part to ensure optimal thermal performance.
4. Mounting screws can be added near the part to fasten the board to a
heatsink. Ensure that the ground / thermal via region contacts the
heatsink.
5. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
6. RF trace width depends upon the PC board material and
construction.
7. Use 1 oz. Copper minimum.
8. All dimensions are in millimeters
Thermal Specifications
Parameter
Rating
Operating Case Temperature
Thermal Resistance (1), Rth
Junction Temperature (2), Tjc
-40 to +85q C
33 q C / W
156 q C
Notes:
1. The thermal resistance is referenced from the junction-to-case at a case
temperature of 85 C. Tjc is a function of the voltage and the current applied.
It can be calculated by:
Tjc = Tcase + Rth * Vcc * Icc
2. This corresponds to the typical biasing condition of +5V, 400 mA at an 85 C
case temperature.
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 5 of 5 November 2005