CHENMKO ENTERPRISE CO.,LTD CHN217UPT SURFACE MOUNT SWITCHING DIODE VOLTAGE 80 Volts CURRENT 0.1 Ampere APPLICATION * Ultra high speed switching SC-70/SOT-323 FEATURE (2) * Small surface mounting type. (SC-70/SOT-323) * Two diode elements are connected in series (VFX2) per circuit. * Maximum total power disspation is 200mW. (3) * Peak forward current is 300mA. CONSTRUCTION (1) 1.3±0.1 0.65 2.0±0.2 0.65 0.3±0.1 1.25±0.1 * Silicon epitaxial planar MARKING * A7 0.9±0.1 0.6 0~0.1 0.15±0.05 0.1Min. CIRCUIT (2) 2.1±0.1 (1) Dimensions in millimeters (3) SC-70/SOT-323 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS SYMBOL CHN217UPT UNITS Maximum Recurrent Peak Reverse Voltage VRRM 80 Volts Maximum RMS Voltage VRMS 56 Volts Maximum DC Blocking Voltage VDC 80 Volts IO 0.1 Amps IFSM 4.0 Amps pF Maximum Average Forward Rectified Current Peak Forward Surge Current at 1uSec. Typical Junction Capacitance between Terminal (Note 1) CJ 2.0 Maximum Operating Temperature Range TJ +150 o C TSTG -55 to +150 o C Storage Temperature Range ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL CHN217UPT UNITS Maximum Instantaneous Forward Voltage at IF= 100mA CHARACTERISTICS VF 1.20 Volts Maximum Average Reverse Current at VR= 70V IR 0.2 uAmps NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 6.0 volts. 2. ESD sensitive product handling required. 2002-5 RATING CHARACTERISTIC CURVES ( CHN217UPT ) FIG. 1 - FORWARD CHARACTERISTICS FIG. 2 - REVERSE CHARACTERISTICS 1m REVERSE CURRENT , (A) FORWARD CURRENT, (A) 1.0 100m 10m 25 o C o 5 Ta = 12 100u 75 o C C -25 o C 1m 100u Ta=125oC 10u 75oC 1u 25oC 100n 10n -25oC 1n 10u 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE, (V) JUNCTION CAPACITANCE, (pF) f=1MHz 1.8 1.6 1.4 1.2 1.0 0 5 10 15 20 25 REVERSE VOLTAGE, (V) 50 REVERSE VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE 2.0 0 30 35 100