MS2575 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES Refractory/Gold Metallization Emitter Site Ballasted ∞ :1 VSWR Capability Low Thermal Resistance Input Matching Overlay Geometry Metal/Ceramic Hermetic Package POUT = 35 W Min. GP = 10.7 dB Gain Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The MS2575 is housed in the IMPAC package with internal input matching. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com W W W. Microsemi .COM The MS2575 is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS Avionics Applications Symbol PDISS IC VCC TJ TSTG ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Parameter Power Dissipation (T C ≤ 100°C) Device Current* Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature Value 150 3.0 55 250 -65 to +150 Unit W A V °C °C 1.0 °C/W THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance Applies only to rated RF amplifier operation Note: Thermal Resistance determined by Infra-Red Scanning of Hot Spot Junction Temperature at rated RF operating conditions. PIN CONNECTION 1 MS2575 2 4 3 1. COLLECTOR 3. EMITTER 2. BASE 4. BASE Copyright 2000 MSC1666.PDF 2001-01-24 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 1 MS2575 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW Symbol BVCBO BVEBO BVCER ICES hFE Test Conditions IC = 10 mA IE = 1 mA IC = 10 mA VBE = 0 V VCE = 5 V IE = 0 mA IC = 0 V RBE = 10 Ω vCE = 50 V IC = 500 mA Min. 65 3.5 65 MS2575 Typ. Max. 5 120 15 Units V V V mA W W W. Microsemi .COM STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°°C) DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25°°C) Symbol Test Conditions POUT ηc GP f = 1025 – 1150 MHz PIN = 3.0 W VCC = 50 V f = 1025 – 1150 MHz PIN = 3.0 W VCC = 50 V f = 1025 – 1150 MHz PIN = 3.0 W VCC = 50 V Note: Min. 35 10.7 43 MS2575 Typ. 40 11.2 48 Max. Units W % dB Pulse width = 10µSec Duty Cycle = 1% ELECTRICALS Copyright 2000 MSC1666.PDF 2001-01-24 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 2 MS2575 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW W W W. Microsemi .COM PACKAGE STYLE - M115 PACKAGE DATTA Copyright 2000 MSC1666.PDF 2001-01-24 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 3 MS2575 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW W W W. Microsemi .COM NOTES Copyright 2000 MSC1666.PDF 2001-01-24 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 4