Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE(sat) tfi typ IXGH 60N60B2 IXGT 60N60B2 Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 110°C 60 A ICM TC = 25°C, 1 ms 300 A SSOA (RBSOA) PC VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600 V TC = 25°C ICM = 150 A 500 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque (M3) Weight TO-247 AD TO-268 SMD TO-268 (IXGT) G E C (TAB) C G = Gate, E = Emitter, E C = Collector, TAB = Collector Features z z z z 6 4 C (TAB) TO-247 AD (IXGH) G 1.13/10 Nm/lb.in. = 600 V = 75 A < 1.8 V = 100 ns g g Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications z Symbol VGE(th) Test Conditions IC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 µA, VCE = VGE ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 50 A, VGE = 15 V Note 1. © 2003 IXYS All rights reserved 3.0 TJ = 25°C TJ = 150°C TJ = 25°C 5.0 z z z z V z 50 1 µA mA ±100 nA 1.8 V PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers DS99113(11/03) IXGH 60N60B2 IXGT 60N60B2 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 58 S 3900 290 pF pF Cres 100 pF Qg Qge 170 25 nC nC 57 nC 28 ns 30 ns gfs Cies Coes IC = 50 A; VCE = 10 V, Note 1 40 ∅P VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 50 A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff TO-247 AD Outline Inductive load, TJ = 25°°C IC = 50 A, VGE = 15 V VCE = 400 V, RG = 3.3 Ω Note 1 ns 100 170 ns 1.0 2.5 mJ 28 36 0.6 310 240 2.8 ns ns mJ ns ns mJ 0.15 0.25 K/W K/W Inductive load, TJ = 125°°C IC = 50 A, VGE = 15 V VCE = 400 V, RG = 3.3 Ω Note 1 RthJC RthCK 160 270 e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Notes: 1. Pulse test, t < 300µs wide, duty cycle < 2%. Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGH 60N60B2 IXGT 60N60B2 Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 350 100 VGE = 15V 13V 11V 90 80 9V 11V 250 60 I C - Amperes 70 I C - Amperes VGE = 15V 13V 300 7V 50 40 30 9V 200 150 7V 100 20 10 50 5V 5V 0 0 0.5 1 1.5 2 2.5 3 0 V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C 2 3 4 5 6 V C E - Volts 7 8 Fig. 4. Dependence of V CE(sat) on Tem perature 1.4 100 VGE = 15V 13V 11V 80 9V V GE = 15V 1.3 70 V C E (sat)- Normalized 90 I C - Amperes 1 7V 60 50 40 30 I C = 100A 1.2 1.1 I C = 50A 1.0 0.9 0.8 20 0.7 5V 10 0 I C = 25A 0.6 0.5 1 1.5 2 2.5 -50 3 -25 0 V CE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 300 3.7 TJ = 25ºC 3.4 250 I C = 100A 50A 25A 2.8 2.5 I C - Amperes VC E - Volts 3.1 2.2 200 150 100 1.9 TJ = 125ºC -40ºC 50 TJ = 25ºC 1.6 0 1.3 5 6 7 8 9 10 11 12 V G E - Volts © 2003 IXYS All rights reserved 13 14 15 16 17 4 5 6 7 V G E - Volts 8 9 10 IXGH 60N60B2 IXGT 60N60B2 Fig. 8. De pendence of Turn-Off Energy on RG Fig. 7. Transconductance 100 10 90 9 TJ = -40ºC 25ºC 125ºC g f s - Siemens 70 8 E off - milliJoules 80 TJ = 125ºC VGE = 15V VCE = 400V 60 50 40 30 I C = 100A 7 6 5 4 20 3 10 2 0 I C = 50A I C = 25A 1 0 50 100 150 200 250 300 0 I C - Amperes Fig. 9. Depe nde nce of Turn-Off Ene rgy on Ic 10 15 20 25 30 35 R G - Ohms 40 45 50 Fig. 10. Dependence of Turn-Off Energy on Tem perature 7 7 R G = 3.3Ω VGE = 15V VCE = 400V 6 5 4 R G = 3.3Ω VGE = 15V VCE = 400V 6 E off - milliJoules E off - MilliJoules 5 TJ = 125ºC 3 2 TJ = 25ºC 1 5 I C = 100A 4 3 I C = 50A 2 1 I C = 25A 0 0 20 30 40 50 60 70 80 90 100 25 35 I C - Amperes Switching Time - nanosecond Switching Time - nanosecond 1000 TJ = 125ºC VGE = 15V VCE = 400V 900 800 700 600 I C = 25A 500 I C = 50A 400 I C = 100A 300 65 75 85 95 105 115 125 Fig. 12. De pendence of Turn-Off Sw itching Tim e on Ic 400 td(off) tfi - - - - - - 1100 55 TJ - Degrees Centigrade Fig. 11. De pendence of Turn-Off Sw itching Tim e on RG 1200 45 200 td(off) tfi - - - - - - 350 R G = 3.3Ω VGE = 15V VCE = 400V 300 TJ = 125ºC 250 200 150 TJ = 25ºC 100 50 0 5 10 15 20 25 30 R G - Ohms 35 40 45 50 20 30 40 50 60 70 I C - Amperes 80 90 100 IXGH 60N60B2 IXGT 60N60B2 Fig. 13. Dependence of Turn-Off Sw itching Tim e on Tem perature Fig. 14. Gate Charge 15 td(off) tfi - - - - - - 300 I C = 25A 50A 100A R G = 3.3Ω VGE = 15V VCE = 400V 250 200 150 I C = 100A 50A 25A 100 VCE = 300V I C = 50A I G = 10mA 12 VG E - Volts Switching Time - nanosecond 350 9 6 3 50 0 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 125 0 20 40 60 80 100 120 140 160 180 Q G - nanoCoulombs Fig. 15. Capacitance 10000 Capacitance - p F f = 1 MHz C ies 1000 C oes 100 C res 10 0 5 10 15 20 25 V C E - Volts 30 35 40 Fig. 16. Maxim um Transient Therm al Resistance 0.275 0.25 R (th) J C - (ºC/W) 0.225 0.2 0.175 0.15 0.125 0.1 0.075 0.05 1 © 2003 IXYS All rights reserved 10 Pulse Width - milliseconds 100 1000