MIMIX XP1031-BD

37.0-42.0 GHz GaAs MMIC
Power Amplifier
P1031-BD
December 2007 - Rev 12-Dec-07
Features
Linear Power Amplifier
Output Power Adjust
23.0 dB Small Signal Gain
+25.0 dBm P1dB Compression Point
+35.0 dBm OIP3
100% On-Wafer RF Testing
General Description
Mimix Broadband’s four stage 37.0-42.0 GHz GaAs
MMIC power amplifier has a small signal gain of
23.0 dB with a +35.0 dBm Output Third Order
Intercept. This MMIC uses Mimix Broadband’s 0.15 µm
GaAs PHEMT device model technology, and is based
upon electron beam lithography to ensure high
repeatability and uniformity. This device is well suited
for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
ESD - Human Body Model
ESD - Machine Body Model
+6.0 VDC
800 mA
+0.3 VDC
+5.0 dBm
-65 to +165 deg C
-55 to MTTF Table1
MTTF Table1
Class 1A
Class M1
(1) Channel temperature affects a device’s MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life
Electrical Characteristics for 37 - 40 GHz
(Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Input Return Loss (S11) with External Match
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB)
Output IM3 with Pout (scl) = 18 dBm
Output IM3 with Pout (scl) = 15 dBm
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg)
Supply Current (Id1) (Vd=5.0V, Vg=-0.7V Typical)
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBc
dBc
VDC
VDC
mA
Min.
37.0
4.0
8.0
8.0
21.0
28.0
38.0
-1.0
-
Typ.
5.0
10.0
12.0
23.0
+/-1.0
45.0
+25.0
+35.0
40.0
+5.0
-0.3
600
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Max.
42.0
+5.5
0.0
675
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Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
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