0405-1000M R3 . 0405-1000M 1000 Watts - 40 Volts, 300µs, 10% UHF Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The 0405-1000M is an internally matched, COMMON EMITTER transistor capable of providing 1000 Watts of pulsed RF output power in a push-pull configuration at three hundreds microsecond pulse width ten percent duty factor across the frequency band 400-450 MHz. This hermetically sealed transistor is specifically designed for medium pulse radar applications. It utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55SL, STYLE 2 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC1 1400 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 85 Volts 3.5 Volts 70 Amps - 65 to + 200oC + 200oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS Pout Power Out (Note 2) Pulsed Pg ηc Pd VSWR1 Power Gain Collector Efficiency Pulse Amplitude Droop Load Mismatch Tolerance TEST CONDITIONS MIN F = 400-450 MHz Vcc = 40 Volts, Pulse Width = 300 µs Duty = 10 % As above F = 425MHz, Po =1000W 1000 9.5 50 TYP MAX UNITS Watts 10 dB % dB 0.5 2:1 FUNCTIONAL CHARACTERISTICS @ 25 OC Bvces Ices Iebo Hfe θjc1 Collector to Emitter Breakdown Collector to Emitter Leakage Emitter to Base Leakage Current DC Current Gain Thermal Resistance Ic = 5 mA Vce = 50 Volts Veb = 3.0 Volts Vce = 5 V, Ic = 100mA Rated Pulse Condition 80 30 25 Volts mA mA 10 0.08 o C/W Issue Nov. 2006 Note 1: Pulse width = 300 us, duty = 10% Note 2: Power Input = 110 Watts Peak Pulsed Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 TEL. 408-986-8031 FAX 408-869-2324 0405-1000M R3 0405-1000M . Performance Curves 0405-1000M Pout Vs. Pin @300uS10%40V 1400 O utputPower(W ) 1200 1000 400MHz 800 425MHz 600 450MHz 400 200 0 0.0 20.0 40.0 60.0 80.0 100.0 120.0 100.0 120.0 Input Power (W) 0405-1000M Efficiency Vs. Pin @300uS10%40V 100% 90% 80% E fficiency 70% 60% 50% 40% 400MHz 30% 425MHz 20% 450MHz 10% 0% 0.0 20.0 40.0 60.0 80.0 Input Power(W) 0405-1000M Band Width@300uS10%40V 12 11.5 11 10.5 10 Pout(W ) 9.5 Pin=95W 9 8.5 8 7.5 7 6.5 6 5.5 5 400 405 410 415 420 425 430 435 440 445 450 Frequency(MHz) Single-Ended Impedance Information Single-Ended Impedance Freq Zs Zl 400 1.39-j2.9 0.79-j2.41 425 1.94-j2.93 0.86-j2.55 450 2.21-j3.07 0.91-j2.95 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 TEL. 408-986-8031 FAX 408-869-2324 0405-1000M R3 0405-1000M Broadband Test Fixture Board Material ARLON 2.55 31 Mil TRL Measurement Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 TEL. 408-986-8031 FAX 408-869-2324 0405-1000M R3 0405-1000M Case Outline Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 TEL. 408-986-8031 FAX 408-869-2324